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Ion Implantation in Gallium Indium Arsenide

Published online by Cambridge University Press:  25 February 2011

M. Anjum ,
M. A. Shahid ,
S. S. Gill ,
B. J. Sealy  and
J. H. Marsh
M. Anjum
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, U.K.
M. A. Shahid
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, U.K.
S. S. Gill
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, U.K. Royal Signals and Radar Establishment, St Andrews Road, Great Malvern, Worcestershire WR14 3PS, U.K.
B. J. Sealy
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, U.K.
J. H. Marsh
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, U.K. Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, Yorkshire, U.K.
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Abstract

We have studied the formation of heavily doped n-type layers in LPE GaInAs using ion implantation. 400 keV selenium ions have been implanted in dose ranges of 5 × 1013 to 1 × 1015 cm−2 at room temperature. For the high dose implants we have reproducibly achieved activities of 20–40% and sheet Hall mobilities of 700–1000 cm−2 V−1 s−1 and peak carrier concentrations of about 1019 cm−3. TEM and RBS results indicate that for long time anneals residual damage persists in the implanted layers, however, anneals at 800°C for 30 seconds perfectly recrystallize the implanted layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 317
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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