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Ion Implantation Damage and Annealing in GaSb

Published online by Cambridge University Press:  22 February 2011

S. Iyer ,
R. Parakkat ,
B. Patnaik ,
N. Parikh  and
S. Hegde
S. Iyer
Affiliation:
Department of Electrical Engineering, North Carolina A&T State University, Greensboro, NC 27411
R. Parakkat
Affiliation:
Department of Electrical Engineering, North Carolina A&T State University, Greensboro, NC 27411
B. Patnaik
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599
N. Parikh
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599
S. Hegde
Affiliation:
University of Dayton Research Institute, Dayton, OH 45649-0178
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Abstract

Ion implantation technique is being investigated as an alternate technique for doping GaSb. Hence an understanding of the production and removal of the damage is essential. In this paper, we report on the damages produced by implantation of Te, Er, Hg and Pb ions into undoped (100) GaSb single crystals and their recovery by Rutherford backscattering (RBS)/channeling. The implantations of 1013 to 1013 ions/cm2 in GaSb were done at liquid nitrogen temperature at energies corresponding to the same projected range of 447Å. A comparison of the damage produced by the different ions and their recovery was made by RBS/channeling along <100> axis of GaSb. Near surface damage equivalent to that of an amorphous layer was observed even at lower doses. Upon annealing at 600°C for 30 sec., the Te implanted samples showed best recovery compared to others (Xmin = 11%), the value of Xmin being better than those normally observed in unimplanted Te-doped substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 185
Copyright
Copyright © Materials Research Society 1994

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References

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