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Ion Implantation and Ion Beam Analysis of Lithium Niobate

Published online by Cambridge University Press:  25 February 2011

G. W. Arnold
G. W. Arnold*
Affiliation:
Sandia National Laboratories, Ion-Solid Interactions Division 1111, Albuquerque, NM 87185-5800
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Abstract

Implantations of He and Ti were made into LiNbO3 and the H and Li profiles determined by elastic recoil detection (ERD) techniques. The loss of Li and gain of H depends upon the supply of surface H (surface contaminants or ambient atmosphere). For 50 keV He implants into LiNbO3 through a 200 Å Al film, the small Li loss is governed by the interface H. This is also the case for He implants into uncoated LiNbO3 in a beam line with low hydrocarbon surface contamination; similar implants under conditions of greater hydrocarbon deposition result in proportionally larger Li loss and H gain in the implant damage region. The exchange is possible only for those He energies, i.e., 50 keV, where the damage profile intersects the surface. For Ti implants Li is lost with little H gain. For this case the Li loss is believed to result from radiation-enhanced diffusion. Where He implantation is used to establish waveguiding in LiNbO3, the presence or absence of H in the implanted region is crucial with regard to refractive index stability, due to the replacement of H by Li from the bulk.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 713
Copyright
Copyright © Materials Research Society 1989

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References

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