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Ion Implantation and Annealing of Oxides

  • C. W. White (a1), L. A. Boatner (a1), P. S. Sklad (a1), C. J. Mchargue (a1), S. J. Pennycook (a1), M. J. Aziz (a2), G. C. Farlow (a3) and J. Rankin (a4)...

Abstract

Ion implantation damage and annealing results are presented for a number of crystalline oxides. In A12 O3, the amorphous phase produced by ion bombardment of the pure material first crystallizes in the (crystalline) γ phase. This is followed by the transformation of γ-Al2 O3 to α-A12O3 at a well defined interface. The activation energy for the growth of α alumina from γ is 3.6 eV/atom. In CaTiO3, the implantation-induced amorphous phase transforms to the crystalline phase by solid-phase epitaxy (SPE). ZnO is observed to remain crystalline even after high implantation doses at liquid nitrogen temperatures. The near surface of KTaO3 is transformed to a polycrystalline state after implantation at room temperature or liquid nitrogen temperature.

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1. McHargue, C.J., Nucl. Instrum. Methods (in press).
2. McHargue, C.J., White, C.W., Appleton, B.R., Farlow, C.G., and Williams, J.M., Proc. Mat. Res. Soc. 27, 385 (1984).
3. Burnett, P.J. and Page, T.F., J. Mater. Sci. 19, 845 (1984).
4. Naramoto, H., White, C.W., Williams, J.M., McHargue, C.J., Holland, O.W., Abraham, M.M., and Appleton, B.R., J. Appl. Phys. 54, 683 (1983).
5. White, C.W., Farlow, G.C., McHargue, C.J., Sklad, P.S., Angelini, M.P., and Appleton, B.R., Nucl. Instrum. Methods B7/8, 473 (1985).
6. White, C.W., Sklad, P.S., Boatner, L.A., Farlow, G.C., McHargue, C.J., Sales, B.C., and Aziz, M.J., Mat. Res. Soc. Proc. 60, 337 (1986).
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Ion Implantation and Annealing of Oxides

  • C. W. White (a1), L. A. Boatner (a1), P. S. Sklad (a1), C. J. Mchargue (a1), S. J. Pennycook (a1), M. J. Aziz (a2), G. C. Farlow (a3) and J. Rankin (a4)...

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