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Ion Implantation and Annealing of Crystalline Oxides

Published online by Cambridge University Press:  28 February 2011

C. W. White ,
P. S. Sklad ,
L. A. Boatner ,
G. C. Farlow ,
C. J. McHargue ,
B. C. Sales  and
M. J. Aziz
C. W. White
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
P. S. Sklad
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
L. A. Boatner
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
G. C. Farlow
Affiliation:
Wright State University, Dayton, OH 45435
C. J. McHargue
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
B. C. Sales
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
M. J. Aziz
Affiliation:
Harvard University, Cambridge, MA 02138
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Abstract

The crystallization of amorphous surface layers produced by ion implantation of single-crystal α-Al2O3 and CaTiO3 are discussed. During annealing, amorphous A12O3 converts first to the α-phase. The crystallized γ then transforms to the a-phase by the motion of a well-defined planar interface. The temperature dependence of the velocity of the γ/α interface has been measured and is characterized by an activation energy of ∼3.6 eV. In CaTiO3, crystallization of the amorphous phase takes place by solid-phase epitaxy. The velocity of the amorphous/crystal interface is characterized by an activation energy of 1.3 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 60: Symposium L – Defect Properties and Processing of High-Technology Nonmetallic Materials , 1985 , 337
Copyright
Copyright © Materials Research Society 1986

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References

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