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Ion Beam Treatment of Ohmic Contacts to n-TYPE Hg1-xCdxTe

Published online by Cambridge University Press:  25 February 2011

Patrick W. Leech ,
Geoffrey K. Reeves  and
Yuan H. Li
Patrick W. Leech
Affiliation:
Telecom Research Laboratories, Melbourne, Victoria, Australia.
Geoffrey K. Reeves
Affiliation:
Royal Melbourne Institute of Technology, Victoria, Australia.
Yuan H. Li
Affiliation:
Royal Melbourne Institute of Technology, Victoria, Australia.
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Abstract

The application of ion beam mixing and ion implantation techniques in the formation of ohmic contacts to n-Hg1-xCdxTe (x = 0.6, 0.7) has been investigated. For experiments in ion beam mixing, an indium layer (15nm thick) on Hg1-xCdxTe wasbombarded with 45keV Te+ ions at doses ranging from 1 × 1013 to 1 × 1016 cm2. Minimum values of specific contact resistance, pc, of 4 × 10-4Ωcm-2 were measured for a dose of 1 × 1016 cm-2 after 200°C annealing; pc was independent of dose in this range. Analysis of the interfaces by Auger depth profile and Rutherford backscattering spectrometry has shown that ion beam mixing produced an enhanced indiffusion of indium. In comparison, samples which were ion implanted with In+ at 50keV prior to metalisation showed a reduction in pc which was strongly dependent on dosage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 281
Copyright
Copyright © Materials Research Society 1992

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References

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