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Ion Beam Synthesis of Silicon Carbide : Infra-Red and RBS Studies

  • L. Simon (a1), A. Mesu (a1), J. J. Grob (a1), T. Heiser (a1) and J. L. Balladore (a1)...

Abstract

We report on p-SiC thin layer synthesis by carbon ion implantation at high temperature. Infra-red and RBS analysis were performed on samples implanted at temperatures ranging from 200 to 900°C and for carbon doses varying in the range 1017to2.1018 cm . RBS analysis does not reveal any diffusion or segregation of carbon up to 900°C. At this temperature we obtained the optimum Infra-red signature. The (3-SiC formation is shown to be a thermally activated process with an energy of 0.1 eV leading us to speculate that the diffusion of point defects could be the limiting factor of the process.

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Ion Beam Synthesis of Silicon Carbide : Infra-Red and RBS Studies

  • L. Simon (a1), A. Mesu (a1), J. J. Grob (a1), T. Heiser (a1) and J. L. Balladore (a1)...

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