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Ion Beam Synthesis of SiC/Si Heterostructures by Mevva Implantation

  • S. P. Wong (a1), L. C. Ho (a1), Dihu Chen (a1), W. S. Guo (a1), H. Yan (a1) and R. W. M. Kwok (a2)...

Abstract

Ion beam synthesis of SiC/Si heterostructures was performed by MEVVA (metal vapor vacuum arc) implantation under various implantation and annealing conditions. The implanted SiC/Si heterostructures were characterized by various techniques. Carbon redistribution in overstoichiometrically implanted samples during annealing to form a stoichiometric SiC layer has been observed for the first time. The FTIR spectra were found to be composed of two components, one attributed to amorphous SiC and the other to β-SiC. It was also found that there are critical dose and critical energy at which the crystalline fraction increases abruptly. Other results on electrical and optical characterization are also presented and discussed

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1. Reeson, K.J., Stoemenos, J. and Hemment, P.L.F., Thin Solid Films 191, 147 (1990).
2. Martin, P., Daudin, B., Dupuy, M., Ermolieff, A., Olivier, M., Papon, A.M. and Rolland, G., J. Appl. Phys. 67, 2908 (1990).
3. Chayahara, A., Kiuchi, M., Kinomura, A. and Mokuno, Y., Jpn. J. Appl. Phys. 32, L1286 (1993).
4. Nejim, A., Hemment, P.L.F., Stoemenos, J., Appl. Phys. Lett. 66, 2646 (1995).
5. Lindner, J.K.N., Frohnwieser, A., Rauschenbach, B. and Strizker, B., Mat. Res. Soc. Symp. Proc. Vol.354, 171 (1995).
6. Lindner, J.K.N., Gotz, B., Frohnwieser, A. and Stritzker, B., Mat. Res. Soc. Symp. Proc. Vol.396, 877 (1996).
7. Yan, H., Kwok, R.W.M., Wong, S.P., Appl. Surf. Sci. 92, 61 (1996).
8. Yan, H, Kwok, R.W.M., Wong, S.P., Diamond and Related Materials 5, 556 (1996).
9. Brown, I. G., Gavin, J. E., MacGill, R.A., Appl. Phys. Lett. 47, 358 (1985).
10. Chen, Dihu, Wong, S.P., Cheung, W.Y., Kwok, R.W.M., Guo, Yongping, to be published.
11. Spitzer, W.G., Klelnman, D.A., CJ. Frosch, Phys. Rev. 113, 133 (1957).
12. Borders, J.A., Picraux, S.T., Beezhold, W., Appl. Phys. Lett. 18, 509 (1971).
13. Yan, H., Wong, S.P., Ho, L.C., Kwok, R.W.M., to be published.
14. Skorupa, W., Kogler, R., Voelskow, M., Schmalz, K., Morgenstern, G., Gaworzewski, P., Nucl. Instr. and Meth. B 68, 408 (1992).
15. Lombardo, S., Cacciato, A., Larsen, K.Kyllesbech, Raineri, V., Via, F.La, Privitera, V., Campisano, S.U., J. Appl. Phys. 79, 3464 (1996).
16. Ho, L.C., M.Phil. Thesis, The Chinese University of Hong Kong (1996).
17. van Cleef, M.W.M., Philippens, M.W.H., Rubinelli, F.A., Kolter, M.A., R.EI. Schropp, Mat. Res. Soc. Symp. Proc. (1996)
18. Ho, L.C. and Wong, S.P., to be published.

Ion Beam Synthesis of SiC/Si Heterostructures by Mevva Implantation

  • S. P. Wong (a1), L. C. Ho (a1), Dihu Chen (a1), W. S. Guo (a1), H. Yan (a1) and R. W. M. Kwok (a2)...

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