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Ion Beam Synthesis of Buried CoxNi1−xSi2 Layers in Silicon

  • M.F. Wu (a1), J. De Wachter (a2), A.-M. Van Bavel (a2), H. Pattyn (a2), G. Langouche (a2), J. Vanhellemont (a3), H. Bender (a3), K. Temst (a4), B. Wuyts (a4) and Y. Bruynseraede (a4)...

Abstract

Heteroepitaxial CoxNi1−xSi2 layers with good crystalline quality have been formed by ion beam synthesis. Rutherford Backscattering (RBS) - Channeling, Auger Electron Spectroscopy (AES), Transmission Electron Microscopy (TEM) and X-Ray Diffraction (XRD) have been used to study the buried layers. For a sample with x=0.66, we found that this ternary silicide layer contains 11% type B and 89% type A orientation. The TEM investigation reveals that the type B component is mainly located at the interfaces with a thickness of a few monolayers. XRD studies show that the strain of the type B component is smaller than that of the type A component, and this is probably the reason for such a unique distribution of the type B component in the epilayer.

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