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Ion Beam Processing of Carbon Nitride Thin Films

  • Richard L.C. Wu (a1), William C. Lanter (a1), John Wrbranek (a1), Peter B. Kosel (a2) and Charles A. Dejoseph (a3)...

Abstract

Amorphous carbon nitride films have been deposited by two different methods: (1) direct ion beam deposition from a gas mixture of CH4/N2; and (2) nitrogen ion beam sputtering of a graphite target. The chemical composition, deposition rate, chemical bond and optical properties of the as-deposited films were studied as a function of the process parameters. In the first technique, ions (CH3 +, N2 +, N+, NH4 +, NH3 +, NH2 +, HCN+, CN+ and N2H2 +) were directly impacted onto the substrate surface. The effects of RF power, CH4/N2 gas ratio, total gas flow, pressure, and ion energy on the film properties and deposition rates were studied. In the second technique, a flux of energetic nitrogen ions (N2 +, N+), generated by N2 and N2/Ar plasmas, were used to directly sputter a graphite target. In this case, the effects of RF power, gas mixture (N2, N2/Ar), and ion energy on the film characteristics and deposition rates were determined. The properties of the films generated by the two alternative techniques were also compared.

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Ion Beam Processing of Carbon Nitride Thin Films

  • Richard L.C. Wu (a1), William C. Lanter (a1), John Wrbranek (a1), Peter B. Kosel (a2) and Charles A. Dejoseph (a3)...

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