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Ion Beam Mixing of Titanium Overlayers with Hydroxyapatite Substrates

Published online by Cambridge University Press:  21 February 2011

Timothy E. Levine
Affiliation:
Cornell University, Department of Materials Sci. and Engineering, Ithaca, NY 14853
Michael Nastasi
Affiliation:
Los Alamos National Laboratory, Materials Sci. and Tech. Div., Los Alamos, NM 87545
T. L. Alford
Affiliation:
Arizona State University, Dept. of Chem., Bio, and Materials Eng., Tempe, AZ 85287
Carlos Suchicital
Affiliation:
Arizona State University, Dept. of Chem., Bio, and Materials Eng., Tempe, AZ 85287
Stephen Russell
Affiliation:
Arizona State University, Dept. of Chem., Bio, and Materials Eng., Tempe, AZ 85287
Karen Luptak
Affiliation:
Arizona State University, Dept. of Chem., Bio, and Materials Eng., Tempe, AZ 85287
Vincent Pizziconi
Affiliation:
Arizona State University, Dept. of Chem., Bio, and Materials Eng., Tempe, AZ 85287
James W. Mayer
Affiliation:
Arizona State University, Dept. of Chem., Bio, and Materials Eng., Tempe, AZ 85287
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Abstract

The mixing of titanium overlayers with hydroxyapatite (HA) substrates via ion irradiation has been demonstrated. Analysis via secondary ion mass spectroscopy (SIMS) indicates an interfacial broadening of titanium and calcium of the implanted sample compared to that of the unimplanted sample. Attendant to the observed ion beam mixing of titanium into the HA, the oxygen signal of the titanium overlayer increases as a result of ion irradiation. It is supposed that this change is evident of diffusion through the metal layer and possibly from titania formation at the free surface and perovskite formation at the film/substrate interface. This possibility is consistent with thermodynamic predictions. Additionally, the force required to separate the film from the substrate increased as a result of ion irradiation, validating the continued study of ion beam processing of Ti/HA systems towards the improvement of long term fixation of implant devices.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

1. Husskies, R., Biomechanics of Artificial Joint Fixation, in Basic Orthopaedic Biomechanics, edited by Mow, V.C. and Hayes, W.C. (Raven Press, Ltd. New York, 1991), p. 375.Google Scholar
2. Malik, M.A., Puleo, D.A., Bizios, R., and Doremus, R.H., Biomaterials 13, 123 (1992).Google Scholar
3. Sioshansi, P., Nucl. Instr. & Meth. B19 204 (1987).Google Scholar
4. Williams, J.M. and Buchanan, R.A., Mater. Sci. & Eng. 69 237 (1985).Google Scholar
5. Filiaggi, MJ., Coombs, N.A., and Pilliar, R.M., J. Biomed. Mater. Res., 25 1211 (1991).Google Scholar
6. Johnson, B. W., CDA J., 20(6) 33 (1992).Google Scholar
7. Ohtsuka, Y., Matsuura, M., Chida, N., Yoshinari, M., Sumii, T., and Derand, T., Surf. Coat. Tech., 65, 224 (1994).Google Scholar
8. Matteson, S. and Nicolet, M-A, in Annual Review of Material Science, edited by Huggins, R.A., Bube, R.H., and Vermilyea, D.A. (Annual Reviews, Inc., Palo Alto, CA, 1983) Vol. 13, pp. 339363.Google Scholar
9. Baglin, J.E.E. in Thin Films: The Relationship of Structure to Properties, edited by Aita, C. and SreeHarsha, K. (Mater. Res. Soc. Proc. 47, Pittsburgh, PA, 1985) pp. 310.Google Scholar
10. Pretorius, R., Harris, J.M., and Nicolet, M-A, Solid State Electronics 21, 667 (1978).Google Scholar
11. Weng, J., Liu, X, Zhang, X., and Ji, X., J. Mater. Res. 13, 159 (1994).Google Scholar
12. Torrisi, L. and Foti, G., Nucl. Inst. Meth. B 65, 139 (1992).Google Scholar
13. Biersack, J.P., Haggmark, L.G., Nucl. Instrum. Methods, 174, 257 (1980); Nucl. Instrum. Methods, B7,461 (1985).Google Scholar
14. McGill, R.A., Yao, X.Y., Castro, R.A., Dickinson, M.R., and Brown, I.G., J. Vac Sci. Technol. A11, 2856 (1993).Google Scholar