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Ion Beam Mixing of GaAs/AlGaAs Superlattice and ITS Relationship to Amorphization

Published online by Cambridge University Press:  21 February 2011

P. P. Pronko ,
A. W. McCormick ,
D. B. Patrizio ,
A. K. Rai ,
R. M. Kolbas  and
B. S. Frank
P. P. Pronko
Affiliation:
Universal Energy Systems, Inc., 4401 Dayton-Xenia Road, Dayton, OH 45432.
A. W. McCormick
Affiliation:
Universal Energy Systems, Inc., 4401 Dayton-Xenia Road, Dayton, OH 45432.
D. B. Patrizio
Affiliation:
Universal Energy Systems, Inc., 4401 Dayton-Xenia Road, Dayton, OH 45432.
A. K. Rai
Affiliation:
Universal Energy Systems, Inc., 4401 Dayton-Xenia Road, Dayton, OH 45432.
R. M. Kolbas
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University (NCSU), Raleigh, NC 27695–7911
B. S. Frank
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University (NCSU), Raleigh, NC 27695–7911
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Abstract

This work is part of a study to understand the process by which energetic ion bombardment can be used to mix the chemical components of AlGaAs and GaAs superlattice (S/I.) layers of nominal 35 to 50Å thickness. Data reported here involve the retention and build-up of collision cascade damage in the S/I. and its relationship to amorphization and chemical mixing in these systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 297
Copyright
Copyright © Materials Research Society 1989

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