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Ion Beam Lithography for Nano-scale Pattern Features

Published online by Cambridge University Press:  01 February 2011

John E.E. Baglin ,
Andrew J. Kellock  and
Jane E. Frommer
John E.E. Baglin
Affiliation:
baglin@almaden.ibm.com, IBM Almaden Research Center, K10/D1, 650 Harry Road, San Jose, CA, 95120, United States, 408 927 2280, 408 927 2100
Andrew J. Kellock
Affiliation:
kellock@almaden.ibm.com, IBM Almaden Research Center, 650 Harry Road, San Jose, CA, 95120, United States
Jane E. Frommer
Affiliation:
frommer@almaden.ibm.com, IBM Almaden Research Center, 650 Harry Road, San Jose, CA, 95120, United States
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Abstract

With the expected availability of new tools for creating patterned ion beams, containing few-nanometer features, it is important to examine the fidelity of registering such patterns in the receiving medium, such as a photoresist layer in a lithographic fabrication process. In this paper, we report experiments exploring the characteristics of ion beam patterning of poly methyl methacrylate (PMMA) and polystyrene (PS) coatings on silicon substrates, with respect to their response as positive / negative resists to patterned low-energy H+, He+ and Ne+ beams. We examine by AFM the feature profiles thus created after solvent development of the polymer layers, and we examine the dependence of the polymer response upon ion species and fluence. Edge resolution ¡Ü20 nm is readily obtained, and broad process windows are identified in fluence ranges around 1013 ions/cm2. Proximity effects are shown to be negligible, except after exposure at very high ion fluences. Granularity within the final pattern features is shown to be a potential concern for high energy, light ion irradiations. Optimization of edge resolution is clearly possible, by appropriate selection of ion species, energy and fluence to suit the receiving medium.

Keywords

ion-beam processingnanoscalelithography (removal)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1020: Symposium GG – Ion-Beam-Based Nanofabrication , 2007 , 1020-GG02-03
Copyright
Copyright © Materials Research Society 2007

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References

1. Ji, Q, Jiang, X, Ji, L, Chen, Y, Akker, B. van der and Leung, K.-N., "Novel Ion Beam Tools for Nanofabrication", Chapter 11 in Nanotech 2005, Volume 2, 703, NSTI (2005)Google Scholar
2. Loeschner, H, Fantner, E.J., Korntner, R, Platzgummer, E, Stengl, G, Zeininger, M, Baglin, J.E.E., Berger, R.., Brünger, W.H., Dietzel, A, Baraton, M.-I. and Merhan, L, Mater. Res. Soc. Proc. 739, H1.3.1 (2003).Google Scholar
3. Dietzel, A, Berger, R, Loeschner, H, Platzgummer, E, Stengl, G, Bruenger, W.H. and Letzkus, F, Advanced Materials 15, 1152 (2003).Google Scholar
4. Melngailis, J, Mondelli, A.A., Berry, I.L., Mohondro, R, J. Vac. Sci. Technol. B16, 97 (1998)Google Scholar
5. Lee, Eal H., "Ion Beam Modification of Polyimides", Chapter 17 in "Polyimides: Fundamentals and Applications", eds. Ghosh, M.H. and Mittal, K., Marcel Dekker, New York (1996)Google Scholar
6. Baglin, J.E.E., Kellock, A.J., Crockett, M.A. and Shih, A.H., Nucl. Instrum. Meth. B64, 469 (1992)Google Scholar
7. Terris, B.D., Weller, D, Folks, L, Baglin, J.E.E., Kellock, A.J., Rothuizen, H and Vettiger, P, J. Appl. Phys. 87, 7004 (2000)Google Scholar
8. Ziegler, J.F., "The Stopping and Range of Ions in Matter", SRIM-2006, http://www.srim.org Google Scholar