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Ion Beam Induced Crystallization of Amorphous Si from NiSi2 Precipitates: An In Situ Study
Published online by Cambridge University Press: 25 February 2011
Abstract
By first growing NiSi2 precipitates in a-Si and then irradiating with a 150 keV Si beam, we have studied ion beam induced epitaxial crystallization (IBIEC) of Si initiated at a-Si/NiSi2 precipitate interfaces. The growth shape and its temperature dependence are studied in-beam via in situ transmission electron microscopy. Interface roughening is evidenced. Preliminary results for the Co-Si system are also reported.
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- Copyright © Materials Research Society 1993
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