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Ion Beam Induced Crystallization in Preamorphized Bp(100)

Published online by Cambridge University Press:  25 February 2011

Naoto Kobayashi ,
Hisao Kobayashi ,
Hisao Tanoue ,
Nobuyuki Hayashi  and
Yukinobu Kumashiro
Naoto Kobayashi
Affiliation:
Electrotechnical Laboratory, 1-1-4 Uiezono, Tsukuba, Ibaraki 305 Japan
Hisao Kobayashi
Affiliation:
Electrotechnical Laboratory, 1-1-4 Uiezono, Tsukuba, Ibaraki 305 Japan
Hisao Tanoue
Affiliation:
Electrotechnical Laboratory, 1-1-4 Uiezono, Tsukuba, Ibaraki 305 Japan
Nobuyuki Hayashi
Affiliation:
Electrotechnical Laboratory, 1-1-4 Uiezono, Tsukuba, Ibaraki 305 Japan
Yukinobu Kumashiro
Affiliation:
Yokohaia National University, Tokiwadai 156, Hodogaya-ku, Yokohaia, Kanagawa 240 Japan
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Abstract

Ion beai induced epitaxial crystallization (IBIEC) in preaiorphized BP(100) has been investigated by RBS channeling experiients. Re-crystallization was induced by subsequent ion boibardients with 400 keV Kr, 400 keV Ar and 800 keV Ar at temperature range between 200°C and 450°C. The current densities of Kr and Ar ions were selected to give the saie energy deposition rate in the elastic collision process. Epitaxial crytallization was observed at teiperatures luch below those required for the therial solid phase epitaxy (SPE) process (above 800°C). The critical temperature for crystallization at typical current densities was 230°C. The ion species used for the preaiorphization give a weak influence on the regrowth rate. On the scale of deposited energy density in the elastic collisions, ion boibardients with higher electronic excitation efficiency were found to be effective in the regrowth process. Dose rate is found to be of iiportance in the regrowth process. The activation energy observed in Ar ion boibardients was 0.18±0.05 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 119
Copyright
Copyright © Materials Research Society 1990

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References

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