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Ion Beam Etching of Silicon: Implantation and Diffusion of Noble Gas Atoms, and Gettering of Copper

Published online by Cambridge University Press:  25 February 2011

William D. Sawyer ,
Jörg Schmälzlin  and
Jörg Weber
William D. Sawyer
Affiliation:
Now at Mobil Solar Energy Corporation, 4 Suburban Park Drive, Billerica, Mass. 01821-3980
Jörg Schmälzlin
Affiliation:
Fakultät für Physik, Albert Ludvigs Universität, Hermann Herder Str. 3, 7800 Freiburg, Federal Republic of Germany
Jörg Weber
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, 7000 Stuttgart 80, Federal Republic of Germany
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Abstract

Defects introduced into silicon by ion beam etching are investigated by low-temperature photoluminescence (PL) and Rutherford backseattering (RBS) measurements. The RBS results show that during the ion beam etch a highly damaged surface layer is formed which contains a large concentration of Ar atoms. The Ar atoms then diffuse out of the surface and into the crystalline bulk by some form of radiation enhanced diffusion. Annealing of the etched samples at 350°C results in the formation of noble gas defects known from previous PL studies of ion implanted silicon. When the samples are annealed at 650βC PL lines due to new defects are formed. Although little is known about their structure, we show that the new Ar defects getter small copper contaminations very effectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 923
Copyright
Copyright © Materials Research Society 1990

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References

1 Fonash, S.J., Solid State Tech, 28, 201 (1985).Google Scholar
2 Bean, J.C., Becker, G.E., Petroff, P.M. and Seidel, T.E., J.Appl.Phys. 48, 907 (1977).Google Scholar
3 Ziegler, J.F., Biersack, J.P. and Littmark, U., in The Stopping and Range of Ions in Solids, edited by Ziegler, J.F. (Peramon Press, New York 1985).Google Scholar
4 Davis, R.J., Habermeier, H.-U. and Weber, J., Appl.Phys.Lett. 47, 1295 (1985).Google Scholar
5 Tkachev, V.D., Mudryi, A.V. and Minaev, N.S., Phys.Stat.Solidi (a) 81, 313 (1984).Google Scholar
6 Bürger, N., Thonke, K., Sauer, R. and Pensl, G.. Phys.Rev.Lett. 52, 1645 (1984).Google Scholar
7 The PL line notation used in Ref.6 shall be used in this paper.Google Scholar
8 Weber, E.R., Appl.Phys. A 30, 1 (1983).Google Scholar
9 Weber, J., Bauch, H. and Sauer, R., Phys.Rev. 25, 7688 (1982).Google Scholar