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Ion Beam Deposition: Damage and Epitaxy

Published online by Cambridge University Press:  28 February 2011

D G Armour
D G Armour*
Affiliation:
Department of Electronic and Electrical Engineering and Centre for Thin Film and Surface Research, University of Salford, Salford M5 4WT, UK.
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Abstract

The bombardment of solid surfaces with ions in the energy range below about 150 eV, depending on the ion-substrate combination, results in a net growth of material on the surface. An ion beam facility capable of producing highly uniform, low energy beams of current densities in the range 10-1 to 1 Am-1 has been developed to study the potential of this growth technique for the fabrication of thin epitaxial films at low temperatures.

The energy deposition associated with ion bombardment, which is considered to be responsible for the low temperature epitaxy capability, can also cause atomic displacements on the surface and near-surface regions of the substrate during initial growth and in the growing film. A study of the growth processes thus requires investigation of the damaging effects of low energy ion bombardment. In the present paper, fundamental aspects of the implantation and deposition of materials using very low energy ions will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 29
Copyright
Copyright © Materials Research Society 1988

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References

1 Greene, JE, Motooka, T, Sudgren, J E, Lubben, D, Gorbatkin, S and Barnett, S A. Nucl Instr Meth in Phys Res B27 226 (1987).CrossRefGoogle Scholar
2 Hasan, M A, Knall, J, Barnett, S A, Rockett, A, Sudgren, J E and Greene, J E. J Vac Sei Technol B 5 1332 (1987).CrossRefGoogle Scholar
3 Herbots, N, Appleton, B R, Pennycook, S J, Hoggle, T S and Zuhr, R A. MRS Proc Symp A, p369, ed Kurz, H, Olson, G L and Poate, J M, Boston (1985).Google Scholar
4 Miyake, K and Tokuyama, T. Thin Solid Films 92 123 (1982).Google Scholar
5 Itoh, T. Proc Int Ion Engineering Conf ISIAT 83 p1149, Kyoto (1983).Google Scholar
6 Armour, D G, Bailey, P, Judge, P A and Sharpies, G. Proc ISIAT 85, p181, Tokyo, (1985).Google Scholar
7 Van den Berg, JA, Armour, D G and Verheij, L K, Inst Phys Conf Series 38 298 (1978).Google Scholar
8 Van den Berg, JA and Armour, D G. Nuci Instr Meth 133 99 (1978).Google Scholar
9 Armour, D G, Wadsworth, M, Badheka, R, Van den Berg, J A, Blackmore, G, Courtney, S, Whitehouse, C R, Clark, E A, Sykes, D E, Collins, R, Emery, M T and Smith, R. Proc SIMS VI, Paris (1987). To be published.Google Scholar
10 Muller, K-H. J Appl Phys 58 2803 (1986).Google Scholar
11 Muller, K-H, Appl Phys 209 A40 (1986).Google Scholar
12 Ahn, J, Lawson, R P W, Yoo, K M, Stromsmoe, K A and Bett, M J. Nuci Instr Meth in Phys Res B17 37 (1986).Google Scholar