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Ion Beam Annealing of Vapor-Deposited Carbon Film

Published online by Cambridge University Press:  16 February 2011

Kazuo Higuchi ,
Shoji Noda ,
Sumiko Iritani ,
Tomoji Ishiguro  and
Osami Kamigaito
Kazuo Higuchi
Affiliation:
TOYOTA Central R & D Labs.. Inc., Nagakute-cho, Aichi-ken 480-11 JAPAN
Shoji Noda
Affiliation:
TOYOTA Central R & D Labs.. Inc., Nagakute-cho, Aichi-ken 480-11 JAPAN
Sumiko Iritani
Affiliation:
TOYOTA Central R & D Labs.. Inc., Nagakute-cho, Aichi-ken 480-11 JAPAN
Tomoji Ishiguro
Affiliation:
TOYOTA Central R & D Labs.. Inc., Nagakute-cho, Aichi-ken 480-11 JAPAN
Osami Kamigaito
Affiliation:
TOYOTA Central R & D Labs.. Inc., Nagakute-cho, Aichi-ken 480-11 JAPAN
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Abstract

The effects of ion implantation on microtexture of vapordeposited carbon film were studied by Raman, XRD, TEM and sheet resistivity measurements. Growth of graphitemicrocrystals in the film was found when the film was implanted at the temperature above about 500 K. while graphite-sheet in the as-deposited film was distorted when it was implanted at the temperature below 300 K. The critical temperature for the ion beam annealing was estimated to be about 350 K. Ion implantation also caused the increase of the adhesion strength of the carbon film to a substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 188: Symposium K – Thin Films: Stresses and Mechanical Properties II , 1990 , 225
Copyright
Copyright © Materials Research Society 1990

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References

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