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Investigations of Low-Temperature Epitaxy, Ion Damage, and Reactive-Ion Cleaning Utilizing Ion Beam Deposition

  • B. R. Appleton (a1), R. A. Zuhr (a1), T. S. Noggle (a1), N. Herbots (a1) and S. J. Pennycook (a1)...


The technique of ion beam deposition (IBD) is utilized to investigate low-energy, ion-induced damage on Si and Ge; to study reactive ion cleaning of Si and Ge; to fabricate amorphous isotopic heterostructures; and to fabricate and study the low-temperature epitaxial deposition of 74Ge on Ge(100), 30Si on Si(100), and 74Ge on Si(100). The techniques of ion scattering/channeling and cross-sectional TEM are combined to characterize the deposits.



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1. Physics Through the 1990's, Condensed Matter Physics: Physics Survey, National Academy Press, Washington, D.C., 1986.
2. Aston, F. W., Philos. Mag. 38/39 (19191925).
3. Dempster, A. J., Phys. Rev. 11, 316 (1918); 18, 415 (1921); 20, 631 (1922).
4. Love, L. O., Science 182, 343 (1973).
5. Wolter, A. R., p. 2A-1 in Proceedings 4th Microelectron Symposium (St. Louis, 1965), IEEE, New York, 1965.
6. Probyn, B. A., J. Phys. D 1, 457 (1968).
7. Amano, J., Bryce, P., and Lawson, R.W.P., J. Vac. Sci. Technol. 13(2), 591 (1976).
8. Amano, J. and Lawson, R.W.P., J. Vac. Sci. Technol. 15(1), 118 (1978).
9. Amano, J., Thin Solid Films 92, 115 (1982).
10. Yagi, K., Tamura, S., and Tokyama, T., Jpn. J. Appl. Phys. 16, 245 (1982).
11. Tsukizoe, T., Nakai, T., and Ohmae, N., J. Appl. Phys. 42, 4770 (1977).
12. Tokuyama, T., Yagi, K., Miyake, K., Tamura, M., Natsuaki, N., and Tachi, S., Nucl. Instrum. Methods 182/183, 241 (1981).
13. Thomas, G. E., Beckers, L. J., Vrakking, J. J., and de Koning, B. R., J. Cryst. Growth 56, 557 (1982).
14. Miyake, K. and Tokuyama, T., Thin Solid Films 92, 123 (1982).
15. Zalm, P. C. and Beckers, L. J., Appl. Phys. Lett. 41(2), 167 (1982).
16. Yamada, I., Inokawa, H., and Takage, T., Nucl. Instrum. Methods B 6, 439 (1985).
17. Herbots, N., Appleton, B. R., Noggle, T. S., Zuhr, R. A., and Pennycook, S. J., Nucl. Instrum. Methods B 13, 250 (1986).
18. Herbots, N., Pennycook, S. J., Appleton, B. R., Noggle, T. S., and Zuhr, R. A., Proceedings Symposium A, 1985 Fall MRS Meeting, Boston, Massachusetts, December 1–4, 1985.
19. Appleton, B. R., Pennycook, S. J., Zuhr, R. A., Herbots, N., and Noggle, T. S., Nucl. Instrum. Methods B, 1987 (in press).
20. Herbots, N., Appleton, B. R., Noggle, T. S., Pennycook, S. J., Zuhr, R. A., and Zehner, D. M., p. 335 in Semiconductor-Based Heterostructures, edited by Green, M. L., Baglin, J.E.E., Chin, G. Y., Deckman, H. W., Mayo, W., and Narashinham, D, The Metallurgical Society, 1986.
21. Hagstrum, H. D., Surf. Sci. 54, 197 (1976).
22. Itoh, T., Nakamura, T., Utomachi, M., and Sugiyama, T., Jpn. J. Appl. Phys. 16, 553 (1977).
23. Takagi, T., Yamada, I., and Sasaki, A., Thin Solid Films 45, 569 (1975).
24. Kuiper, A.E.T., Thomas, G. E., and Schanten, W. J., J. Cryst. Growth 51, 17 (1981).
25. Paine, B. M. and Averbach, R. S., Nucl. Instrum. Methods B 7/8, 666 (1985).
26. Appleton, B. R., p. 189 in Ion Implantation and Ion Beam Processing, edited by Williams, J. S. and Poate, J. M., Academic Press, New York, 1984.
27. Greene, J. E., Crit. Rev. Solid State and Mater. Sci. 11(1), 47 (1983); also see J. E. Greene, “Recent Results on the Role of Low-Energy Ion/Surface Interactions During Crystal Growth from the Vapor Phase,” these proceedings.
28. Bean, J. C., Science 230, 127 (1985) and references therein.
29. Lima, C. A. Ferreira and Howie, A., Philos. Mag. 34, 1057 (1976); L. G. Salisbury, J. Microsc. 118, 75 (1979).
30. Coburn, J. W., Winters, H. F., J. Appl. Phys. 50, 3189 (1979).
31. Winters, H. F., Coburn, J. W., J. Vac. Sci. Technol. 3, 1376 (1985).
32. Csepregi, L., Kennedy, E. F., Mayer, J. W., and Sigmon, T. W., J. Appl. Phys. 49, 3906 (1978).
33. Suni, I., Goltz, G., Nicolet, M. A., and Lau, S. S., Thin Solid Films 93, 171 (1982).
34. Jinno, K., Kinoshida, H., and Matsumato, Y., J. Electrochem. Soc. 125, 827 (1978).
35. Magab, C. J. and Levinstein, H. F., J. Vac. Sci. Technol. 17, 721 (1980).
36. Lee, Y. H. and Chen, M. M., J. Vac. Sci. Technol. B 4, 468 (1986).
37. Beuk, J., Mannaerts, J. P., Ourmazo, A., Feldman, L. C., and Davidson, B. A., Appl. Phys. Lett. 49, 286 (1986).
38. Herbots, N., Appleton, B. R., Noggle, T. S., Zehner, D. M., and Zuhr, R. A., “Low-Temperature Growth of Thin SiO2 Films by Ion Beam Deposition (IBD),” these proceedings.


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