Hostname: page-component-8448b6f56d-m8qmq Total loading time: 0 Render date: 2024-04-25T02:41:38.320Z Has data issue: false hasContentIssue false
  • English
  • Français

Investigations of an Antimony Doped Poly-Silicon Gate Structure for P-Type JFET Applications

Published online by Cambridge University Press:  21 February 2011

Anders SÖDERBÄrg ,
Ö. Grelsson  and
U. Magnusson
Anders SÖDERBÄrg
Affiliation:
University of Uppsala, Department of technology, P.O. Box 534, S-751 21 Uppsala, Sweden
Ö. Grelsson
Affiliation:
University of Uppsala, Department of technology, P.O. Box 534, S-751 21 Uppsala, Sweden
U. Magnusson
Affiliation:
University of Uppsala, Department of technology, P.O. Box 534, S-751 21 Uppsala, Sweden
Get access

Abstract

A polysilicon gate structure for application as gate material in p-channel JFET's is presented. The structure was manufactured using solid-phase epitaxy of an evaporated antimony/amorphous—silicon layer. The fabrication process together with experimental evaluation of both diode and JFET characteristics is given. The structure shows near ideal n+p-junction behaviour and the fabricated JFET's are normally off with good values of subthreshold swing and transconductance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990 , 299
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Tsaur, B. and Choi, H.K., IEEE El. Dev. Lett., EDL–7, 324, (1986).10.1109/EDL.1986.26388Google Scholar
2. Tirén, J., Grelsson, Ö., Söderbärg, A., Magnusson, U., Norde, H., Svensson, B.G., Mohadjeri, B. and Berg, S., J. Appl. Phys., in print, (1989).Google Scholar
3. Gong, S.F., Hentzell, H.T.G. and Robertsson, A.E., J. Appl. Phys., 64, 1457, (1988).Google Scholar
4. Gong, S.F., Hentzell, H.T.G., Radnoczi, G. and Charai, A., Appl. Phys. Lett., 53, 902, (1988).Google Scholar