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Investigation on the Growth Mechanism of Zinc Oxide Film Prepared by Electrochemical Method

Published online by Cambridge University Press:  10 February 2011

Jaeyoung Lee  and
Yongsug Tak
Jaeyoung Lee
Affiliation:
Department of Chemical Engineering, Inha University, Inchon 402–751, Korea, ystak@munhak.inha.ac.kr
Yongsug Tak
Affiliation:
Department of Chemical Engineering, Inha University, Inchon 402–751, Korea, ystak@munhak.inha.ac.kr
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Abstract

ZnO thin films were potentiostatically deposited on ITO electrode in 0.1 M Zn(NO3)2 and the film growth mechanism was investigated by using FTIR and electrochemical quartz crystal microbalance(EQCM). Intermediates formed in the initial stage were identified as soluble zinc hydroxides and a critical concentration of OH was required for the ZnO to be deposited. A rapid growth rate of ZnO film observed in the presence of O2 was attributed to the higher cathodic current which produces OH

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 495: Symposium W – Chemical Aspects of Electronic Ceramics Processing , 1997 , 457
Copyright
Copyright © Materials Research Society 1998

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References

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