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Investigation on Phase Change Behaviors of Si-Sb-Te Alloy: The Effect of Tellurium Segregation

Published online by Cambridge University Press:  28 June 2011

Xilin Zhou ,
Liangcai Wu ,
Zhitang Song ,
Feng Rao ,
Kun Ren ,
Yan Cheng ,
Bo Liu ,
Dongning Yao ,
Songlin Feng  and
Bomy Chen
Xilin Zhou
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050, P. R. China Graduate University of the Chinese Academy of Sciences, Beijing, 100049, P. R. China
Liangcai Wu
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050, P. R. China
Zhitang Song
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050, P. R. China
Feng Rao
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050, P. R. China
Kun Ren
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050, P. R. China Graduate University of the Chinese Academy of Sciences, Beijing, 100049, P. R. China
Yan Cheng
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050, P. R. China
Bo Liu
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050, P. R. China
Dongning Yao
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050, P. R. China
Songlin Feng
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050, P. R. China
Bomy Chen
Affiliation:
Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, U.S.A.
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Abstract

In this study, novel Si2Sb2Te6 phase change material is investigated in detail for the phase change memory application using transmission electron microscopy and X-ray photoelectron spectroscopy. The phenomenon that Te diffuses to the film surface during phase switching and successively evaporates out has been confirmed. The phase change memory cells employing Si2Sb2Te6 and Si3Sb2Te3 materials are fabricated and programmed. For the Si2Sb2Te6-based cell a data endurance of 5×105 cycles is achieved with a failure mode resembling reset stuck, which can be attributed to the migration of Tellurium during the operation cycles. It means that a thermally stable material system of SixSb2Te3 is preferred for the PCM applications.

Keywords

phase transformationtransmission electron microscopy (TEM)x-ray photoelectron spectroscopy (XPS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1337: Symposium Q – New Functional Materials and Emerging Device Architectures for Nonvolatile Memories , 2011 , mrss11-1337-q03-07-r04-07
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Wuttig, M., Nat. Mater. 4, 265, (2005).Google Scholar
2. Zhang, T., Song, Z. T., Rao, F., Feng, G. M., Liu, B., Feng, S. L., and Chen, B., Jpn. J. App. Phy. 46, L247 (2007).Google Scholar
3. Zhou, X. L., Wu, L. C., Song, Z. T., Rao, F., Liu, B., Yao, D. N., Yin, W. J., Li, J. T., Feng, S. L., and Chen, B., Appl. Phys. Express 2, 091401(2009).Google Scholar
4. Rao, F., Song, Z. T., Ren, K., Zhou, X. L., Cheng, Y., Wu, L. C., and Liu, B., Nanotechnology 22, 145702 (2011).Google Scholar
5. Cheng, Y., Han, X. D., Liu, X. Q., Zheng, K., Zhang, Z., Zhang, T., Song, Z. T., Liu, B., and Feng, S. L., Appl. Phys. Lett. 93, 183113 (2008).Google Scholar
6. Cabral, C. Jr., Chen, K. N., Krusin-Elbaum, L., and Deline, V., Appl. Phys. Lett. 90, 051908 (2007).Google Scholar
7. Krusin-Elbaum, L., Cabral, C. Jr., Chen, K. N., Copel, M., Abraham, D. W., Reuter, K. B., Rossnagel, S. M., Bruley, J., Deline, V. R., Appl. Phys. Lett. 90, 141902 (2007).Google Scholar
8. Shin, M. J., Choi, D. J., Kang, M. J., and Choi, S. Y., J. Korea Phys. Soc. 44, 10 (2004).Google Scholar
9. Cheng, H. Y., Jong, C. A., Chung, R. J., Chin, T. S., and Huang, R. T., Semicond. Sci. Technol. 20, 1111 (2005).Google Scholar
10. Chao, D. S., Lien, C., Lee, C. M., Chen, Y. C., Yeh, J. T., Chen, F., Chen, M. J., Yen, P. H., Kao, M. J., and Tsai, M. J., Appl. Phys. Lett. 92, 062108 (2008).Google Scholar
11. Ren, K., Rao, F., Song, Z. T., Cheng, Yan, Wu, L. C., Zhou, X. L., Gong, Y. F., Xiao, M. J., Liu, B., and Feng, S. L., Scripta Mater. 64, 685 (2011).Google Scholar