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Investigation on Morphology and Microstructure of the SALD SiC

Published online by Cambridge University Press:  10 February 2011

Lianchao Sun ,
James E. Crocker ,
Leon L. Shaw  and
Harris L. Marcus
Lianchao Sun
Affiliation:
Institute of Materials Science, The University of Connecticut, Storrs, CT 06268-3136
James E. Crocker
Affiliation:
Institute of Materials Science, The University of Connecticut, Storrs, CT 06268-3136
Leon L. Shaw
Affiliation:
Institute of Materials Science, The University of Connecticut, Storrs, CT 06268-3136
Harris L. Marcus
Affiliation:
Institute of Materials Science, The University of Connecticut, Storrs, CT 06268-3136
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Abstract

In this work, the deposition of silicon carbide lines using a tetramethylsilane (TMS) precursor was investigated. Effects of target temperatures on the morphology and crystal structure of the deposits were examined. It was found that the morphology of the SALD SiC depends strongly on the target temperature. The contour of the cross section of the SiC deposits changes from a triangle to trapezoid to volcano shape and the surface morphology of the deposited lines changes from smooth to rough to porous as the target temperature increases. A critical target temperature was found to be about 700°C to initiate deposition of SiC under the current experimental configurations. X-ray diffraction analyses show that the SALD SiC formed at 1000°C contains both crystalline and amorphous phases. The results are briefly discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 542: Symposium V – Solid Freeform and Additive Fabrication , 1998 , 37
Copyright
Copyright © Materials Research Society 1999

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