Skip to main content Accessibility help

Investigation of Thermoelectric Properties of P-Type GaN Thin Films

  • Bahadir Kucukgok (a1), Babar Hussain (a1), Chuanle Zhou (a1), Ian T. Ferguson (a2) and Na Lu (a3)...


GaN and its alloys are promising candidates for high temperature thermoelectric (TE) materials due to their high Seebeck coefficient and high thermal and mechanical stability. Moreover, these materials can overcome the toxicity concern of current Te-based TE materials, such as Bi2Te3 and PbTe. These materials have recently shown a higher Seebeck coefficient than that of SiGe in high temperature region because their large bandgap characteristic eliminates the bipolar conduction. In this study, we report the room temperature thermoelectric properties of p-type Mg doped GaN, grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrate with various carrier concentrations. Undoped and n-type GaN are also incorporated with p-type GaN films to make comparison. The structural, optical, electrical, and thermal properties of the samples were examined by X-ray diffraction, photoluminescence, van der Pauw hall-effect, and thermal gradient methods, respectively. The Seebeck coefficient ranging from 710-900µV/K at room temperature of Mg: GaN were observed, which further indicated their potential TE applications.



Hide All
1. Han, C.-G., Zhang, B.-P., Ge, Z.-H., Zhang, L.-J., Liu, Y.-C., J Mater Sci. 48, 40814087 (2013).
2. Li, D., Sun, R.-R., Qin, X.-Y., Progress in Natural Science: Materials International, 21, 336340 (2011).
3. Tan, G., Zhao, L.-D., Shi, F., Doak, J. W., Lo, S.-H., Sun, H., Wolverton, C., Dravid, V. P., Uher, C., and Kanatzidis, M. G., J. Am. Chem. Soc. 136, 70067017 (2014).
4. Xu, L., Liu, Y., Chen, B., Zhao, C., Lu, K., Polym. Compos. 34, (2013).
5. Chen, Z., Han, Y.M., Zhou, M., Song, C.M., Huang, R.J., Zhou, Y., and Li, L.F., Journal of Electronic Materials, 43 (2014).
6. Hurwitz, E. N., Kucukgok, B., Melton, A. G., Liu, Z.Q., Lu, N., and Ferguson, I. T., MRS Proceedings, 1396 (2012).
7. Xiao, C., Li, K., Zhang, J., Tong, W., Liu, Y., Li, Z., Huang, P., Pan, B., Sud, H., and Xie, Y., Mater. Horiz. 1, 8186 (2014).
8. Yelgel, O. C. and Srivastava, G. P., J. Appl. Phys. 113, 073709 (2013).
9. Korkosz, R. J., Chasapis, T. C., Lo, S.-H., Doak, J. W., Kim, Y. J., Wu, C.-I., Hatzikraniotis, E., Hogan, T. P., Seidman, D. N., Wolverton, C., Dravid, V. P., and Kanatzidis, M. G., J. Am. Chem. Soc. 136, 32253237 (2014).
10. Du, B., Saiga, Y., Kajisa, K., and Takabatake, T., Chem. Mater. 27, 18301836 (2015).
11. Jost, M., Lingner, J., Letz, M., and Jakob, G., Semicond. Sci. Technol. 29, 124011 (2014).
12. Lu, N. and Ferguson, I., Semicond. Sci. Technol. 28, 074023 (2013).
13. Ong, K. P., Singh, D. J., and Wu, P., Physical Review B, 83, 115110 (2011).
14. Jaworski, C. M., Nielsen, M. D., Wang, H., Girard, S. N., Cai, W., Porter, W. D., Kanatzidis, M. G., and Heremans, J. P., Physical Review B, 87, 045203 (2013).
15. Tani, J.-I. and Kido, H., Jpn. J. Appl. Phys. 46, (2007).
16. Heremans, J. P., Wiendlochaac, B., and Chamoire, A. M., Energy Environ. Sci. 5, 5510 (2012).
17. Nakajima, A., Liu, P., Ogura, M., Makino, T., Nishizawa, S.-I., Yamasaki, S., Ohashi, H., Kakushima, K., and Iwa, H., Appl. Phys. Express, 6 , 091002 (2013).
18. Kucukgok, B., Wang, B., Melton, A. G., Lu, N., and Ferguson, I. T., Phys. Status Solidi C, 11, 894897 (2014).
19. Walle, C. G. V. D., SPIE 3283, (1998).
20. Yamaguchi, S., Iwamura, Y., Yamamoto, A., Appl. Phys. Lett. 82, (2003).


Investigation of Thermoelectric Properties of P-Type GaN Thin Films

  • Bahadir Kucukgok (a1), Babar Hussain (a1), Chuanle Zhou (a1), Ian T. Ferguson (a2) and Na Lu (a3)...


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed