Hostname: page-component-8448b6f56d-c4f8m Total loading time: 0 Render date: 2024-04-24T05:42:43.577Z Has data issue: false hasContentIssue false
  • English
  • Français

Investigation of the Silicon Nitride on Hydrogenated Amorphous Silicon Interface

Published online by Cambridge University Press:  25 February 2011

A. V. Gelatos  and
J. Kanicki
A. V. Gelatos
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, N.Y. 10598.
J. Kanicki
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, N.Y. 10598.
Get access

Abstract

We report on our investigation of the silicon nitride on hydrogenated amorphous silicon interface by high frequency capacitance-voltage measurements. We show evidence for the existence of a large number of interface states at energies less than or equal to 0.36 eV below the hydrogenated amorphous silicon conduction band. In addition, we demonstrate that the states responsible for the hysteresis in capacitance-voltage characteristics are located in the silicon nitride layer. Finally, we argue that the ability of hydrogenated amorphous silicon to act as hole diffusion barrier is responsible for the observed flat-band voltage shift.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 729
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nicollian, E.H. and Brews, J.R. in “MOS Physics and Technology,” (John Wiley & Sons, New York, 1982).Google Scholar
2. Street, R.A., Phys. Rev. Lett. 49, 1187 (1982).Google Scholar
3. Johnson, N.M., J. Non-Cryst. Solids 59&60, 265 (1985).Google Scholar
4. Matsuura, H., Okuno, T., Okushi, H., and Tanaka, K., J. Appl. Phys. 55 1012 (1984).Google Scholar
5. Essick, J., and Cohen, J.D., these proceedings.Google Scholar
6. Gelatos, A.V. and Kanicki, J., submitted for publication; also in p. 139 of the “Proceedings of the International Topical Conference on Hydrogenated Amorphous Silicon Devices and Technology,” Yorktown Heights, New York, November 21–23, 1988.Google Scholar
7. Street, R.A., and Thompson, M.J., Appl. Phys. Lett. 45 769 (1984).Google Scholar
8. Manookian, W.Z. and Wilson, J.I.B., IEEE Proceedings, 133 153 (1986).Google Scholar
9. Moore, A.R. in “Hydrogenated Amorphous Silicon,” vol.21 part C of Semiconductors and Semimetals, edited by Pankove, J. (Academic Press, New York 1984), p. 239.Google Scholar
10. Krick, D.T., Lenahan, P.M., and Kanicki, J., J. Appl. Phys. 64, 3558 (1988).Google Scholar