Hostname: page-component-7c8c6479df-ws8qp Total loading time: 0 Render date: 2024-03-28T16:16:00.537Z Has data issue: false hasContentIssue false

Investigation of the Homogeneity and Defect Structure in Semi-Insulating Lec GaAs Single Crystals by Synchrotron Radiation Double Crystal X-Ray Topography.

Published online by Cambridge University Press:  25 February 2011

S J Barnett
Affiliation:
Physics Department, University of Durham, South Rd., Durham, U.K..
B K Tanner
Affiliation:
Physics Department, University of Durham, South Rd., Durham, U.K..
G. T. Brown
Affiliation:
Royal Signals and Radar Establishment, St.Andrews Rd. Malvern, Worcs. U.K.
Get access

Abstract

The high intensity and large beam size of a synchrotron radiation source have been exploited in order to obtain double crystal X-ray topographs of whole 2in. and 3in. slices of semi-insulating LEC GaAs single crystals. Exposure times, typically 30 minutes for high resolution topographs, are at least one order of magnitude down on those required when using a conventional source. Variations in relative lattice parameter and lattice tilt have been measured as a function of position on the slice. The defect structure has been imaged and dislocations are seen in cellular configurations, slip bands and linear arrays (lineage), the latter of which are shown to be associated with small lattice tilts, typically 30”. The defect structure revealed on the topographs has been correlated with 1μm infrared absorption micrographs which are believed to represent the concentration of the dominant deep level EL2.

Type
Research Article
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Holmes, D.E., Chen, R.T., Elliot, K.R. and Kirkpatrick, C.G., Appl. Phys. Lett. 43(3), 305 (1983)10.1063/1.94294Google Scholar
2. Matsumura, T. Emori, H., Terashima, K. and Fukuda, T., Jap. J. Appl. Phys. 22(3), L154 (1983)10.1143/JJAP.22.L154Google Scholar
3. Nanishi, Y., Ishida, S. and Miyazawa, S., Jap. J. Appl. Phys. 22(1), L54 (1983)10.1143/JJAP.22.L54Google Scholar
4. Honda, T., Ishii, Y., Miyazawa, S., Yamazaki, H. and Nanishi, Y., Jap. J. Appl. Phys. 22(5), L270 (1983)10.1143/JJAP.22.L270Google Scholar
5. Skolnick, M.S., Brozel, M.R., Reed, L.J., Grant, I., Stirland, D.J. and Ware, R.M., J.Electronic Materials 13, 107 (1984)10.1007/BF02659839Google Scholar
6. Brozel, M.R., Grant, I., Ware, R.M. and Stirland, D.J., Appl. Phys. Lett. 42, 610 (1983)10.1063/1.94019Google Scholar
7. Bowen, D.K., Davies, S.T., Nuc. Instr. and Meth. 208, 725 (1983)10.1016/0167-5087(83)91213-9Google Scholar
8. Skolnick, M.S., Reed, L.J. and Pitt, A.D., Appl. Phys.Lett. 44, 447 (1984)10.1063/1.94762Google Scholar
9. Kikuta, S., Khora, K. and Sugita, Y., Jap. J. Appl. Phys 5(11), 1047 (1966)10.1143/JJAP.5.1047Google Scholar
10. Brown, G.T., Skolnick, M.S., Jones, G.R., Tanner, B.K. and Barnett, S.J., Proc. 3rd. semi.insulating III–V materials conf., Oregon (1984)Google Scholar
11. Weber, E.R., Ennen, H., Kaufmann, U., Windschief, J., Scheider, J. and Wesinksi, T., J. Appl. Phys. 53, 6140 (1982)10.1063/1.331577Google Scholar
12. Stirland, D.J., Grant, I., Brozel, M.R. and Ware, R.M. Inst. of Phys. Conf. Series 67, 285 (1983)Google Scholar
13. Driscoll, C.M.H. and Willoughby, A.F.W., Defects in Semiconductors 1972, p.377. Inst. of Phys. Conf. Series 16 (1973)Google Scholar