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Investigation of the Homogeneity and Defect Structure in Semi-Insulating Lec GaAs Single Crystals by Synchrotron Radiation Double Crystal X-Ray Topography.

  • S J Barnett (a1), B K Tanner (a1) and G. T. Brown (a2)

Abstract

The high intensity and large beam size of a synchrotron radiation source have been exploited in order to obtain double crystal X-ray topographs of whole 2in. and 3in. slices of semi-insulating LEC GaAs single crystals. Exposure times, typically 30 minutes for high resolution topographs, are at least one order of magnitude down on those required when using a conventional source. Variations in relative lattice parameter and lattice tilt have been measured as a function of position on the slice. The defect structure has been imaged and dislocations are seen in cellular configurations, slip bands and linear arrays (lineage), the latter of which are shown to be associated with small lattice tilts, typically 30”. The defect structure revealed on the topographs has been correlated with 1μm infrared absorption micrographs which are believed to represent the concentration of the dominant deep level EL2.

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Investigation of the Homogeneity and Defect Structure in Semi-Insulating Lec GaAs Single Crystals by Synchrotron Radiation Double Crystal X-Ray Topography.

  • S J Barnett (a1), B K Tanner (a1) and G. T. Brown (a2)

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