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Investigation of the Growth and Chemical Stability of Composite Metal Gates on Ultra-thin Gate Dielectrics

Published online by Cambridge University Press:  10 February 2011

B. Claflin ,
M. Binger ,
G. Lucovsky  and
H.-Y. Yang
B. Claflin
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695 claflin @ ncsu.edu, gerryjlucovsky @ncsu.edu
M. Binger
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695 claflin @ ncsu.edu, gerryjlucovsky @ncsu.edu
G. Lucovsky
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695 claflin @ ncsu.edu, gerryjlucovsky @ncsu.edu
H.-Y. Yang
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695 claflin @ ncsu.edu, gerryjlucovsky @ncsu.edu
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Abstract

The growth of reactively sputtered TiNx and WNx compound metal films on ultra-thin, remote plasma enhanced chemical vapor deposited SiO2 and SiO2/Si3N4 (ON) stack dielectrics is investigated from initial interface formation to bulk film by interrupted growth and on-line Auger electron spectroscopy (AES). Growth of both metals occurs uniformly without a seed layer on both dielectrics. The chemical stability of these metal/dielectric interfaces is studied by sequential on-line rapid thermal annealing treatments up to 850 °C and AES. TiNx reacts with SiO2 above 850 °C but the addition of a Si3N4 dielectric top-layer makes the TiNx/ON interface chemically stable at 850 °C. WNx/SiO2 and WNx/Si3N4 interfaces are both stable below 650 °C. MOS capacitors using TiNx or WNx metal gates and thermal SiO2 gate dielectrics exhibit excellent capacitance-voltage characteristics. The work function for TiNx lies near midgap in Si while for WNx it lies closer to the valence band.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 532: Symposium EE – Silicon Front-End Technology - Materials Processing & Modeling , 1998 , 171
Copyright
Copyright © Materials Research Society 1998

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References

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