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Investigation of Bi-Exciton Formation in Doped GaAsAlxGa(1-x)as Quantum Wells

Published online by Cambridge University Press:  21 February 2011

CI. Harris ,
B. Monemar ,
P.O. Holtz ,
M. Sundaram ,
J.L. Merz  and
A.C. Gossard
CI. Harris
Affiliation:
Department of Physics and Measurement Technology, University of Linköping, S-58183 Linköping, Sweden.
B. Monemar
Affiliation:
Department of Physics and Measurement Technology, University of Linköping, S-58183 Linköping, Sweden.
P.O. Holtz
Affiliation:
Department of Physics and Measurement Technology, University of Linköping, S-58183 Linköping, Sweden.
M. Sundaram
Affiliation:
Center for Studies of Quantized Electronic Structures (QUEST), University of California at Santa Barbara, CA 93016, USA
J.L. Merz
Affiliation:
Center for Studies of Quantized Electronic Structures (QUEST), University of California at Santa Barbara, CA 93016, USA
A.C. Gossard
Affiliation:
Center for Studies of Quantized Electronic Structures (QUEST), University of California at Santa Barbara, CA 93016, USA
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Abstract

A number of recent studies of GaAs/AlxGa(1-x)As quantum wells using low temperature photoluminescence have demonstrated the formation of bi-excitons. It is generally assumed that bi-excitons will only be formed in samples with low impurity concentration, we demonstrate in this work that bi-excitons can be observed in 150 Å quantum well samples with an acceptor doping density as high as 3x1017 cm-3. We discuss how bi-exciton formation is limited by impurity capture and show how this influence can partly account for the less than quadratic intensity dependence typically observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 507
Copyright
Copyright © Materials Research Society 1994

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References

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