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Investigation of a-Si:H PH(1)N Color Detector Operation

Published online by Cambridge University Press:  10 February 2011

M. Topiĉ ,
F. Smole  and
J. Furlan
M. Topiĉ
Affiliation:
Faculty of Electrical Engineering, University of Ljubljana, Tržaŝka 25, SI-100O Ljubljana, Slovenia, marko.topic@fe.uni-lj.si
F. Smole
Affiliation:
Faculty of Electrical Engineering, University of Ljubljana, Tržaŝka 25, SI-100O Ljubljana, Slovenia
J. Furlan
Affiliation:
Faculty of Electrical Engineering, University of Ljubljana, Tržaŝka 25, SI-100O Ljubljana, Slovenia
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Abstract

Using numerical simulator, the operational principle of two-terminal a-Si:H based three-color detectors with the multi-layer multi-bandgap PIN or PIIiN structure is investigated. Two different approaches, which lead to bias-controlled three-color detection, are described and evaluated in terms of spectral response, rejection ratio, color suppression, illumination intensity and bias-light. For both PIIN and PIIN structure, bias-light dependence and intensity dependence is investigated. Numerical simulation results showed strong negative correlation between color separation and bias-light sensitivity. The importance of the transparent conducting oxide for the three-color detection limits is demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 389
Copyright
Copyright © Materials Research Society 1998

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References

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