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Investigation of an in-situ probe for phase transformations during RTP silicidation

Published online by Cambridge University Press:  25 February 2011

R. J. Schreutelkamp ,
P. Vandenabeele ,
B. Deweerdt ,
W. Coppye ,
C. Vermeiren ,
A. Lauwers  and
K. Maex
R. J. Schreutelkamp
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
P. Vandenabeele
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
B. Deweerdt
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
W. Coppye
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
C. Vermeiren
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
A. Lauwers
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
K. Maex
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
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Abstract

In-situ emissivity measurements at a wavelength of 2.4 μα were used to monitor RTP Co silicidation on crystalline and polycrystalline silicon substrates. The influence of various parameters influencing the silicidation reaction was extensively studied. It is shown that particularly the phase transformation from CoSi to the final suicide phase, COSi2, strongly depends on parameters such as background doping level and type of substrate. This is illustrated for As-doped substrates. The method is extremely sensitive for the in-situ detection of the thermal degradation of thin COSi2 films at high temperatures, which is demonstrated for 25 nm COSi2 layers on highly As-doped c-Si substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 145
Copyright
Copyright © Materials Research Society 1992

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References

REFErences

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