At present a 10% KI solution is commonly used as an etchant for HgI2 crystals. Recent photoluminescence (PL) spectra from such etched samples show that impurities contained in the KI solution dope the HgI2 during the etching process. Some of these dopants are known to cause carrier trapping in the detectors fabricated from the material. Thus, it is desirable to find an alternative etchant that does not create new defects in HgI2. Etchants studied here include deionized water, 10% potassium iodide (KI), methanol, and acetone. The results of acetone as an etchant reveal only small changes in the PL spectra after etching. Methanol etching causes the incorporation of a deep radiative recombination center in HgI2.