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Investigation and Characterization of Thin Mocvd Copper Films From Pyrazolylborato - Copper (I) Complexes

Published online by Cambridge University Press:  25 February 2011

E.-C. Plappert ,
K.-H. Dahmen ,
H. Van Den Bergh ,
T. Stumm  and
R. Hauert
E.-C. Plappert
Affiliation:
Laboratorium fur Anorganische Chemie, ETHZ, CH - 8092 Zürich
K.-H. Dahmen
Affiliation:
Laboratorium fur Anorganische Chemie, ETHZ, CH - 8092 Zürich
H. Van Den Bergh
Affiliation:
Laboratoire de Pollution Atmosphérique et Sols, EPFL, CH - 1015 Lausanne
T. Stumm
Affiliation:
Laboratoire d’Optique Appliquée, EPFL, CH - 1015 Lausanne
R. Hauert
Affiliation:
EMPA, CH-8600 Dubendorf
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Abstract

Thin copper layers were prepared via MOCVD from volatile pyrazolylborato - copper (I) complexes.

Experiments involved chemical vapour deposition in a low pressure reactor between 150 - 350°C in H2/N2/He mixtures were carried out.

Substrate temperature, source temperature and gas composition were varied to obtain the optimum growth rate.

The copper layers were characterized by optical microscopy and scanning electron microscopy, XRD, and WDX. The metallic nature of the deposited films was proved by a four - point - probe measurement of the electrical resistivity.

A selective deposition on metal seeded surface sites was observed on Au, Al, Pt and W vs. Si02- Antiselective deposition was achieved on Pd seeded samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 697
Copyright
Copyright © Materials Research Society 1994

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References

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