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Inversion-Type Mos Field Effect Transistors Using CVD Grown Cubic SiC on Si
Published online by Cambridge University Press: 25 February 2011
Abstract
Inversion-type n-channel MOSFET's of cubic-SiC were successfully fabricated. MOSFET's were fabricated on an antiphase-domains free layer grown on Si(100) by carbonization and subsequent chemical vapor deposition. Ion implantation technique was used to form source and drain of MOSFET's. A gate oxide of SiO2 was formed by thermal oxidation of SiC. Inversion mode operation was confirmed for the first time. Annealing temperature dependence of electrical characteristics of P+ and N2+ implanted layer and characteristics of p-n junction diodes fabricated using ion implantation technique were also investigated.
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