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Introduction of Electrical Defects in P-Type Silicon due to Electron-Beam and RF Sputtering Metallization Processes

Published online by Cambridge University Press:  22 February 2011

O. Paz  and
F. D. Auret
O. Paz
Affiliation:
IBM East Fishkill Laboratories, Hopewell Junction, NY 12533
F. D. Auret
Affiliation:
Dept. of Physics, University of Port Elizabeth, P.O. Box 1600, Port Elizabeth 6000, South Africa
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Abstract

Defects introduced in p-type silicon during RF sputter deposition of Ti-W and electron-beam evaporation of hafnium were investigated using I-V, deep level transient spectroscopy and electron-beam induced current techniques. DLTS measurements indicate the presence of several deposition and evaporation induced defect states. H(0.35) at EV + .35 eV and H(0.38) were the most prominent defects. Minority carrier diffusion length results taken after annealing showed that in the case of the Hf contacts the damage was annealed out while in the case of Ti-W it was not. These differences in carrier recombination are traced to the concentration of H(0.35). Sputtering or evaporation induced damage also increased the barrier height. This observed increase was modeled assuming the introduction of donor-like defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 619
Copyright
Copyright © Materials Research Society 1984

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References

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