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Intrinsic Luminescence of GaAs/AIGaAs Heterojunctions in a Transverse Electric Field

Published online by Cambridge University Press:  25 February 2011

Q.X. Zhao ,
J.P. Bergman ,
P.O. Holtz ,
B. Monemar ,
C. Hallin ,
M. Sundaram ,
J.L. Merz  and
A.C. Gossard
Q.X. Zhao
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
J.P. Bergman
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
P.O. Holtz
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
B. Monemar
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
C. Hallin
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
M. Sundaram
Affiliation:
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106, USA
J.L. Merz
Affiliation:
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106, USA
A.C. Gossard
Affiliation:
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106, USA
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Abstract

Radiative recombination of the two dimensional electron gas (2DEG) in a modulation doped GaAs/AIGaAs heterojunction (the so called H-band luminescence) has been studied under transverse electric field perturbation (i.e. perpendicular to the layers) in special structures prepared by molecular beam epitaxy. Both positive and negative gate voltages have been applied to the GaAs/AIGaAs interface, and shifts of the H-band energy position depending on the gate voltage are induced by the corresponding changes in the notch potential and the potential across the GaAs layer. It is demonstrated that a transverse electric field allows a simple way to modify the width and shape of the potential, so that detailed spectroscopy can be done on the recombination of carriers localized in a interface potential.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 337
Copyright
Copyright © Materials Research Society 1990

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References

1 Ando, T., Fowler, A. B. and Stern, F., Reviews of Modern Physics 54 (1982).Google Scholar
2 Yuan, Y. R., Mohammed, K., Pudensi, M.A.A. and Merz, J. L., Appl. Phys. Lett. 45 739 (1984).Google Scholar
3 Vasil’ev, A. M., Kop’ev, P.S., Kochereshko, V.P., Ledentsov, N.N., Mel’tser, B. Ya., Ural’tsev, I.N., Ustinov, V.M., and Yakovlev, D.R., Sov. Phys. Semicond. 20 220 (1986).Google Scholar
4 Ossau, W., Bangert, E., and Weimann, G., Solid State Communications 64 711 (1987).Google Scholar
5 Kukushkin, I.V., Klitzing, K.V. and Ploog, K., Phys. Rev. B37 8509 (1988).Google Scholar
6 Zhao, Q.X., Bergman, J.P., Holtz, P.O., Monemar, B., Hallin, C., Sundaram, M., Merz, J.L. and Gossard, A.C., submitted to Phys. Rev. B.Google Scholar
7 Chen, W.M., Zhao, Q.X., Ahlström, M. and Monemar, B., Proc 19th Int Conf on the Physics of Semiconductors, Ed. Zawadzki, W. (Institute of Physics, Polish Academy of Sciences, Warsaw, 1988), p 279.Google Scholar
8 Hickmott, T. W., Phys. Rev. B32 6532 (1985).Google Scholar