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Intersubband Transitions in In x Ga1-x As/AlGaAs Multiple Quantum Wells for Long Wavelength Infrared Detection

  • Clayton L. Workman (a1), Zhiming Wang (a1), Wenquan Ma (a1), Christi E. George (a1), R. Panneer Selvam (a1), Gregory J. Salamo (a1), Qiaoying Zhou (a2) and M. Omar Manasreh (a2)...

Abstract

We report on intersubband transitions in In x Ga1-x As/AlGaAs multiple quantum wells (MQWs) grown by molecular beam epitaxy. The conduction band offset for this material system is larger than that of the well known GaAs/AlGaAs system, thus making it possible to design, grow, and fabricate quantum well infrared photodetectors operational beyond the 14 μm spectral region with minimized dark current. We have grown In x Ga1-x As/AlGaAs MQWs with indium compositions ranging from x = 0.08 to 0.20 verified by in situ RHEED oscillations, band offset measurements, and high-resolution X-ray diffraction. Band-to-band transitions were verified by photoluminescence measurements, and intersubband transitions were measured using Fourier transform infrared (FTIR) spectroscopy. Due to the high strain and introduction of dislocations associated with the high indium content, wells with indium compositions above ∼ 0.12 did not result in intersubband transitions at silicon doping levels of 2×1018 cm-3. A thick linear graded In x Ga1-x As buffer was grown below the MQW structures to reduce the strain and resulting dislocations. Intersubband transitions were measured in In x Ga1-x As wells with indium compositions of x = 0.20 and greater when grown on top of the linear graded buffer. In addition to these results, FTIR measurements on InGaAs/AlGaAs MQW multi-color, long-wavelength infrared detector structures are reported.

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1. Levine, B. F., J. Appl. Phys. 74, R1 (1993).
2.Semiconductor Quantum Wells and Superlattices for Long-Wavelength Infrared Detectors,” edited by Manasreh, M. O. (Artic House, Boston 1993).
3. “Long Wavelength Infrared Detectors,” edited by Razeghi, M., Vol. 1 in the book series “Optoelectronic Properties of Semiconductors and Superlattices,” edited by Manasreh, M. O. (Gordon and Breach, Amsterdam, 1996).
4. “Infrared Detectors,” Rogalski, A., Vol. 10 in the book series “Electrocomponent Science Monographs,” edited by Campbell, D. S. (Gordon and Breach, Amsterdam, 2000).
5. Gunapala, S. D. and Bandara, S. V., Semiconductors and Semimetals 62, (1999).
6. Chui, H. C. and Harris, J. S. Jr, J. Vac. Sci. Technol. B 2, 1019 (1994).
7. Jiang, X., Li, S. S., and Tidrow, M. Z., IEEE J. Quantum Electronics 35, 1685 (1999).
8. Huang, D. and Manasreh, M. O., J. Appl. Phys. 80, 6045 (1996).
9. “Intersubband Transitions in Strained InGaAs Quantum Wells for Multi-color Infrared Detector Applications,” Ph.D. dissertation by C. L. Workman, University of Arkansas, Fayetteville, 2002.
10. Vurgaftman, I., Meyer, J. R., and Ram-Mohan, L. R., J. Appl. Phys. 89, 5815 (2001).

Intersubband Transitions in In x Ga1-x As/AlGaAs Multiple Quantum Wells for Long Wavelength Infrared Detection

  • Clayton L. Workman (a1), Zhiming Wang (a1), Wenquan Ma (a1), Christi E. George (a1), R. Panneer Selvam (a1), Gregory J. Salamo (a1), Qiaoying Zhou (a2) and M. Omar Manasreh (a2)...

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