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Intersubband Absorption in the Conduction Band of Si/Si1−xGex Multiple Quantum Wells
Published online by Cambridge University Press: 22 February 2011
Abstract
The intersubband absorption of electrons in modulation doped Si/Si1−xGex multiple quantum wells has been observed [1]. Various samples with different well widths and carrier densities have been studied. Narrow absorption lines are observed in waveguide geometry. Self consistent subband calculations are in good agreement with the experimental values.
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- Copyright © Materials Research Society 1991
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