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Intermixing of Chromium and Copper by Argon Ion Recoil Implantation

Published online by Cambridge University Press:  15 February 2011

N. Baron ,
J. Greggi  and
J Schreurs
N. Baron
Affiliation:
Westinghouse Research and Development Center, 1310 Beulah Road, Pittsburgh, Pennsylvania, USA
J. Greggi
Affiliation:
Westinghouse Research and Development Center, 1310 Beulah Road, Pittsburgh, Pennsylvania, USA
J Schreurs
Affiliation:
Westinghouse Research and Development Center, 1310 Beulah Road, Pittsburgh, Pennsylvania, USA
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Abstract

Argon ions at 150 keV and fluences ranging from 5 × 1015 to 4.8 × 1017 ions/cm2 were used to bombard 60 nm chromium layers deposited on copper. The resulting concentration profiles were determined by AES and thin film microstructural analyses were performed using an STEM equipped with an energy dispersive X-ray spectrometer (EDS). The concentration profiles are in qualitative agreement with the theory of radiation induced mixing. At fluences up to 2.4 × 1017 Ar+/cm2, metastable solid solutions of increasing copper content in BCC chromium are formed. At the highest fluence (4.8 × 1017 Ar+/cm2 ), chromium rich precipitates form in the copper matrix.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 7 , 1981 , 43
Copyright
Copyright © Materials Research Society 1982

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References

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