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Interfacial Tunnel Structures In Cmos Source/Drain Regions Following Selective Deposition of Tungsten

Published online by Cambridge University Press:  28 February 2011

J.M. Deblasi ,
D.K. Sadana  and
M.H. Norcott
J.M. Deblasi
Affiliation:
Philips Research Laboratories Sunnyvale, Signetics Corporation, Sunnyvale, CA 94088-3409
D.K. Sadana
Affiliation:
Philips Research Laboratories Sunnyvale, Signetics Corporation, Sunnyvale, CA 94088-3409
M.H. Norcott
Affiliation:
Philips Research Laboratories Sunnyvale, Signetics Corporation, Sunnyvale, CA 94088-3409
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Abstract

The influence of B and As ion implantation on the location and density of interfacial tunnels, the extent of lateral encroachment, the amount of silicon consumed, and the crystallographic defects in CMOS source/drain structures following selective chemical vapor deposition of tungsten has been characterized.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 303
Copyright
Copyright © Materials Research Society 1986

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