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Interfacial Tunnel Structures In Cmos Source/Drain Regions Following Selective Deposition of Tungsten
Published online by Cambridge University Press: 28 February 2011
Abstract
The influence of B and As ion implantation on the location and density of interfacial tunnels, the extent of lateral encroachment, the amount of silicon consumed, and the crystallographic defects in CMOS source/drain structures following selective chemical vapor deposition of tungsten has been characterized.
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