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Interfacial Stability and Misfit Dislocation Formation in InAs/Gaas(110) Heteroepitaxy

  • Luis A. Zepeda-Ruiz (a1), Dimitrios Maroudas (a1) and W. Henry Weinberg (a1)

Abstract

A comprehensive atomic-scale study is presented of the mechanical behavior of the InAs epitaxial film, the interfacial stability with respect to misfit dislocation formation, and the film surface morphology in InAs/GaAs(110) heteroepitaxy. If a GaAs buffer layer of ten-monolayer thickness is used in the epitaxial growth, a transition is predicted from a coherent to a semi- coherent interface consisting of a regular array of edge interfacial misfit dislocations at a critical film thickness of six monolayers. A second transition to a semicoherent interface consisting of a completely developed network of perpendicularly intersecting misfit dislocations is predicted at thicknesses greater than 150 monolayers. Our simulation results are in excellent agreement with recent experimental data.

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Interfacial Stability and Misfit Dislocation Formation in InAs/Gaas(110) Heteroepitaxy

  • Luis A. Zepeda-Ruiz (a1), Dimitrios Maroudas (a1) and W. Henry Weinberg (a1)

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