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Interfacial Phenomena Affecting Charge Transport In Small Molecule Organic Thin-Film Transistors

  • Antonio Facchetti (a1), Choongik Kim (a2), Myung-han Yoon (a3) and Tobin J Marks (a4)


Organic semiconductors exhibiting p-, n-type, or ambipolar majority charge transport are grown on six different bilayer dielectric structures consisting of various spin-coated polymers / HMDS on 300 nm SiO2/p+-Si, and are characterized by AFM, SEM, and WAXRD, followed by field-effect transistor (FET) electrical characterization. It is observed that in case of air-sensitive n-type semiconductors, dielectric surface modifications induce large variations in the corresponding OTFT performance parameters although the film morphologies and microstructures remain similar. In marked contrast, the device performance of air-stable n-type and p-type semiconductors is not significantly affected by the same dielectric surface modifications. This study provides key information on the chemical origin of the charge trapping sites at the FET dielectric-semiconductor interface. In parallel, bottom-contact FETs of n-type oligothiophenes were investigated by a combination of microscopy/electrical measurements and new insights for the poor electron injection efficiency from the Au contacts are presented



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[1] Dimitrakopoulos, D., Malenfant, P. R. L., Adv. Mater. 14, 99, (2002).
[2] Facchetti, A., Yoon, M.-H., Marks, T. J., Adv. Mater. 17, 1705, (2005).
[3] Fritz, S. E., Kelly, T. W., Frisbie, C. D., J. Phys. Chem. B 109, 10574, (2005).
[4] Yoon, M.-Y., Kim, C. S., Facchetti, A., Marks, T. J., J. Am. Chem. Soc., 2006, 128, 12851



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