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  • R.C. POND (a1)


It is shown that interfacial defects are characterised by combinations of symmetry operations, one from each of the adjacent crystals. This approach demonstrates that the variety of possible interfacial defects is broader than had been previously recognised, and includes disclinations and dispirations in addition to dislocations. The condition of the initial substrate surface is shown to have a very important influence on the character and stability of interfacial defects.



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1. Matthews, J.W., 1975, Epitaxial Growth, Mat. Sci. Series, Academic Press, New York.
2. Pond, R.C. and Bollmann, W., 1979, Phil. Trans. Roy. Soc. Lond. 292, 449.
3. Pond, R.C. and Vlachavas, D.S., 1983, Proc. R. Soc. Lond. 386A, 95.
4. Pond, R.C., 1985, Dislocations and The Properties of Real Materials, Inst. of Metals, London, 71.
5. Nabarro, F.R.N., 1967, Theory of Crystal Dislocations, Oxford Univ. Press.
6.International Tables for Crystallography, 1983, D. Reidel Pub. Co., Boston.
7. Pond, R.C., Dineen, C., Peters, T. and Pitt, M., in preparation.
8. Reed, W.T., 1953, Dislocations in Crystals, McGraw-Hill, London.
9. Pond, R.C. and Cherns, D., 1985, Surf. Sci., 152, 1197.
10. Igoraski, O., 1971, J. Appl. Phys., 42, 4035.
11. Bartha, J.W. and Henzler, M., 1985, Surf. Sci., in press.
12. Carter, C.B. and Schmalzried, 1985, Phil. Mag., A52, 207.
13. Pond, R.C., McAuley, N. and Devenish, R.W., 1985, Inst. Phys. Conf. Ser. 76, 67.
14. Li, J.C.M., 1972, Surf. Sci. 31, 12.
15. Pond, R.C., Gowers, J.P. and Joyce, B.A., 1985, Surf. Sci., 152, 1191.
16. Kuan, T.S., Kuech, T.F., Wang, W.I. and Wilkie, E.L., 1985, Phys. Rev. Letts., 54, 201.
17. Mickkelsen, J.C. and Boyce, J.B., 1983, Phys. Rev. B28, 7130.
18. Eaglesham, D.J. and Kiely, C.J., 1985, Proc. E.M.A.G., Inst. of Physics, London.
19. Cherns, D. and Kiely, C.J., 1986, these proceedings.


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