Skip to main content Accessibility help
×
Home

Interfacial Arsenic from Wet Oxidation of AlxGa1-xAs/GaAs: Its Effects on Electronic Properties and New Approaches to Mis Device Fabrication

  • Carol I.H. Ashby (a1), John P. Sullivan (a1), Nancy A. Missert (a1), Paula P. Newcomer (a1), Hong Q. Hou (a1), B.E. Hammons (a1), Michael J. Hafich (a1) and Albert G. Baca (a1)...

Abstract

Three important oxidation regimes have been identified in the temporal evolution of the wet thermal oxidation of AlxGa1-xAs (1 ≥ x ≥ 0.90) on GaAs: 1) oxidation of Al and Ga in the AlxGa1-xAs alloy to form an amorphous oxide layer, 2) oxidative formation and elimination of elemental As (both crystalline and amorphous) and of amorphous As2O3, and 3) crystallization of the oxide film. Residual As can result in up to a 100-fold increase in leakage current and a 30% increase in the dielectric constant and produce strong Fermi-level pinning and high leakage currents at the oxidized AlxGa1-xAs/GaAs interface. The presence of thermodynamically-favored interfacial As may impose a fundamental limitation on the application of AlGaAs wet oxidation for achieving MIS devices in the GaAs material system.

Copyright

References

Hide All
1 Dallesasse, J.M., Holonyak, N. Jr., Sugg, A.R., Richard, T.A., and El-Zein, N., Appl. Phys. Lett, 57, 22844 (1990).
2 Chen, E.I., Holonyak, N. Jr., and Maranowski, S.A., Appl. Phys. Lett., 66, 2688 (1995).
3 Richter, H., Wang, Z.P., Ley, L., Solid State Comm. 39, 625 (1981).
4 Schwartz, G.P., Eschwartz, B., DiStefano, D., Gualtieri, G.J., and Griffiths, J.E., Appl. Phys. Lett. 34, 205 (1979).
5 Schwartz, G.P., Gualtieri, G.J., Griffiths, J.E., Thurmond, C.D., Schwartz, B., Electrochem, J., Soc. 127, 2488 (1980).
6 Twesten, R.D., Follstaedt, D.M., Choquette, K.D., and Schneider, R.P. ,Jr. Appl. Phys. Lett. 69, 19 (1996).
7 Scaife, B. K. P., Principles of Dielectrics (Clarendon Press, Oxford, 1989).
8 Passlack, M., Hong, M., Mannaerts, J. P., Appl. Phys. Lett. 68, 1099 (1996).
9 Woodall, J.M., Kirchner, P.D., Freeouf, J.F., Mclnturff, D.T., Melloch, M.R., Pollak, F.H., Phil. Trans. Roy. Soc. Lond. A 344, 521 (1993).
10 Thurmond, C.D., Schwartz, G.P., Kammlott, G.W., and Schwartz, B., J. Electrochem Soc. 127, 1366 (1980).

Related content

Powered by UNSILO

Interfacial Arsenic from Wet Oxidation of AlxGa1-xAs/GaAs: Its Effects on Electronic Properties and New Approaches to Mis Device Fabrication

  • Carol I.H. Ashby (a1), John P. Sullivan (a1), Nancy A. Missert (a1), Paula P. Newcomer (a1), Hong Q. Hou (a1), B.E. Hammons (a1), Michael J. Hafich (a1) and Albert G. Baca (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.