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Interfacial Arsenic from Wet Oxidation of AlxGa1-xAs/GaAs: Its Effects on Electronic Properties and New Approaches to Mis Device Fabrication

Published online by Cambridge University Press:  03 September 2012

Carol I.H. Ashby ,
John P. Sullivan ,
Nancy A. Missert ,
Paula P. Newcomer ,
Hong Q. Hou ,
B.E. Hammons ,
Michael J. Hafich  and
Albert G. Baca
Carol I.H. Ashby
Affiliation:
Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185-0603.
John P. Sullivan
Affiliation:
Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185-0603.
Nancy A. Missert
Affiliation:
Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185-0603.
Paula P. Newcomer
Affiliation:
Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185-0603.
Hong Q. Hou
Affiliation:
Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185-0603.
B.E. Hammons
Affiliation:
Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185-0603.
Michael J. Hafich
Affiliation:
Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185-0603.
Albert G. Baca
Affiliation:
Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185-0603.
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Abstract

Three important oxidation regimes have been identified in the temporal evolution of the wet thermal oxidation of AlxGa1-xAs (1 ≥ x ≥ 0.90) on GaAs: 1) oxidation of Al and Ga in the AlxGa1-xAs alloy to form an amorphous oxide layer, 2) oxidative formation and elimination of elemental As (both crystalline and amorphous) and of amorphous As2O3, and 3) crystallization of the oxide film. Residual As can result in up to a 100-fold increase in leakage current and a 30% increase in the dielectric constant and produce strong Fermi-level pinning and high leakage currents at the oxidized AlxGa1-xAs/GaAs interface. The presence of thermodynamically-favored interfacial As may impose a fundamental limitation on the application of AlGaAs wet oxidation for achieving MIS devices in the GaAs material system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 285
Copyright
Copyright © Materials Research Society 1997

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