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Interface Structure and Defects in CVD 3C-SiC on (111) and (112) TiC Substrates

  • Fen-Ren Chien (a1), S. R. Nutt (a1), N. Buchan (a2), J. M. Carulli (a2), C. P. Beetz (a2), W. S. Yoo (a2) and D. Cummings (a2)...

Abstract

3C-SiC, lattice-matched with TiC, is a candidate for use in wide-bandgap semiconductor devices. Epitaxial 3C-SiC films were grown on (111) and (112) TiC substrates, and defects were characterized by analytical TEM.

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Interface Structure and Defects in CVD 3C-SiC on (111) and (112) TiC Substrates

  • Fen-Ren Chien (a1), S. R. Nutt (a1), N. Buchan (a2), J. M. Carulli (a2), C. P. Beetz (a2), W. S. Yoo (a2) and D. Cummings (a2)...

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