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Interface Structure and Defects in CVD 3C-SiC on (111) and (112) TiC Substrates

  • Fen-Ren Chien (a1), S. R. Nutt (a1), N. Buchan (a2), J. M. Carulli (a2), C. P. Beetz (a2), W. S. Yoo (a2) and D. Cummings (a2)...

Abstract

3C-SiC, lattice-matched with TiC, is a candidate for use in wide-bandgap semiconductor devices. Epitaxial 3C-SiC films were grown on (111) and (112) TiC substrates, and defects were characterized by analytical TEM.

Copyright

COPYRIGHT: © Materials Research Society 1993

References

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1. Powell, J.A. and Matus, L.G., Amorphous and Crystalline Silicon Carbide, edited by Harris, G.L. and Yang, C.Y.-W., (Springer Proceedings in Physics, Vol.34, 1989) pp. 2–12
2. Pirouz, P., Polycrystalline Semiconductors, edited by Werner, J.H., Moller, H.J. and Strunk, H.P., (Spring Proceedings in Physics, Vol. 35, 1989) pp.200–212
3. Kong, H.S., Jiang, B.L., Glass, J.T., Rozgonyi, G.A. and More, K.L., J. Appl. Phys, 63 (8), 2645 (1988)
4. Wang, Y.C., Kong, H.S., Glass, J.T., Davis, R.F. and More, K.L., J. Am. Ceram. Soc. 73 (5), 1289 (1990)
5. Parsons, J.D., Bunshah, R.F. and Stafsudd, O.M., Solid State Tech. 11, 133 (1985)
6. Yoo, W.S., Beetz, C.P. Jr., Chien, F.-R., Nutt, S.R., Kimoto, T. and Matsunami, H., presented at the 1992 MRS fall meeting, Boston, MA, 1992 (to be published)
  • Cited by 1

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Interface Structure and Defects in CVD 3C-SiC on (111) and (112) TiC Substrates

  • Fen-Ren Chien (a1), S. R. Nutt (a1), N. Buchan (a2), J. M. Carulli (a2), C. P. Beetz (a2), W. S. Yoo (a2) and D. Cummings (a2)...

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