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Interface Reactions In Tasi 2/Si Contacts at High Temperature

Published online by Cambridge University Press:  22 February 2011

H. Oppolzer ,
F. Neppl  and
K. Hieber
H. Oppolzer
Affiliation:
Siemens AG, Research Laboratories, Munich, Otto-Hahn-Ring 6, Fed. Rep., Germany
F. Neppl
Affiliation:
Siemens AG, Research Laboratories, Munich, Otto-Hahn-Ring 6, Fed. Rep., Germany
K. Hieber
Affiliation:
Siemens AG, Research Laboratories, Munich, Otto-Hahn-Ring 6, Fed. Rep., Germany
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Abstract

The influence of deviations from TaSi2 stoichiometry in co-sputtered,amorphous Ta-Si films on interface reactions in contacts to silicon at 900°C was investigated by TEM of thin cross sections through the contact windows. Excess silicon precipitates epitaxially in the contacts, pits are formed for silicon deficiency. The involved lateral silicon transport ranges over several tens of microns. The effects of interfacial oxides and a crystalline TaSi 2 pad layer were studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 593
Copyright
Copyright © Materials Research Society 1984

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References

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