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Interface Reactions in LiNbO3 Based Optoelectronics Devices

Published online by Cambridge University Press:  21 March 2011

Hirotoshi Nagata ,
Yasuyuki Miyama ,
Kaoru Higuma ,
Yoshihiro Hashimoto ,
Futoshi Yamamoto ,
Yuuji Yamane  and
Miki Yatsuki
Hirotoshi Nagata
Affiliation:
Optoelectronics Research Division, New Technology Research Laboratories, Sumitomo Osaka Cement Co., Ltd., 585 Toyotomi-cho, Funabashi-shi, Chiba 274-9601, Japan
Yasuyuki Miyama
Affiliation:
Optoelectronics Research Division, New Technology Research Laboratories, Sumitomo Osaka Cement Co., Ltd., 585 Toyotomi-cho, Funabashi-shi, Chiba 274-9601, Japan
Kaoru Higuma
Affiliation:
Optoelectronics Research Division, New Technology Research Laboratories, Sumitomo Osaka Cement Co., Ltd., 585 Toyotomi-cho, Funabashi-shi, Chiba 274-9601, Japan
Yoshihiro Hashimoto
Affiliation:
Optoelectronics Research Division, New Technology Research Laboratories, Sumitomo Osaka Cement Co., Ltd., 585 Toyotomi-cho, Funabashi-shi, Chiba 274-9601, Japan
Futoshi Yamamoto
Affiliation:
Optoelectronics Research Division, New Technology Research Laboratories, Sumitomo Osaka Cement Co., Ltd., 585 Toyotomi-cho, Funabashi-shi, Chiba 274-9601, Japan
Yuuji Yamane
Affiliation:
Optoelectronics Research Division, New Technology Research Laboratories, Sumitomo Osaka Cement Co., Ltd., 585 Toyotomi-cho, Funabashi-shi, Chiba 274-9601, Japan
Miki Yatsuki
Affiliation:
Optoelectronics Research Division, New Technology Research Laboratories, Sumitomo Osaka Cement Co., Ltd., 585 Toyotomi-cho, Funabashi-shi, Chiba 274-9601, Japan
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Abstract

We present secondary ion mass spectrometry (SIMS) study results on interfaces of LiNbO3 based optoelectronic devices, which have been performed in order to examine the cause of device failures. The devices are widely used in current high-speed optical fiber communication systems, and such investigation from a materials-viewpoint is important to improve the device quality. Especially, the device long-term stability is strongly affected by alkali-contaminants diffused into the SiO2 buffer layer of device, and here we confirmed that an adoption of common Si3N4 passivation is effective in preventing the process-induced contamination without any influence to device performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 654: Symposia AA – Structure-Property Relationships of Oxide Surfaces & Interfaces , 2000 , AA3.2.1
Copyright
Copyright © Materials Research Society 2001

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References

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