Skip to main content Accessibility help
×
Home

Interface Properties of PrxAl2-xO3 (x = 0 to 2) Dielectrics on TiN Studied by Synchrotron Radiation X-ray Photoelectron Spectroscopy

  • Grzegorz Lupina (a1), Thomas Schroeder (a1), Christian Wenger (a1), Jarek Dabrowski (a1), Gunther Lippert (a1) and Hans-Joachim Müssig (a1)...

Abstract

Extending the scalability of deep trench capacitor dynamic random access memories requires introduction of a high-k dielectric-based storage capacitor structure. Pr-enriched Al2O3 dielectrics with TiN electrodes appear as a promising materials system for this application. Electrical measurements performed on this materials combination show, however, that achieving a very low capacitance equivalent thickness and low leakage current requires very careful control of the electrode/dielectric interface properties. In particular, formation of a parasitic interface layer has to be avoided. For this purpose, we carried out a systematic synchrotron radiation x-ray photoelectron spectroscopy study to non-destructively investigate the interface reactivity of the PrxAl2-xO3 (x = 0, 1, 2)dielectrics with TiN metal electrodes. The depth profiling study shows that the TiN substrate is covered with a native TiO2. Additionally, a thin interfacial Ti oxynitride layer is present between these compounds, resulting in a TiN/TiNO/TiO2 materials stack. Molecular beam deposition of Al2O3 onto substrates of this structure leads to a remarkable reduction of the native oxide. In contrast, in the same way deposited PrAlO3 and Pr2O3 dielectrics are significantly less reactive towards TiO2. As a consequence, the native TiON/TiO2 remains the main component of the interface layer in the TiN/PrAlO3 and TiN/Pr2O3 capacitor stacks. Such a configuration poses severe scalability problems to the Pr aluminate dielectrics.

Copyright

References

Hide All
1. Mueller, W., Aichmayr, G., Bergner, W., Erben, E., Hecht, T., Kapteyn, C., Kersch, A., Kudelka, S., Lau, F., Luetzen, J., Orth, A., Nuetzel, J., Schloesser, T., Scholz, A., Schroeder, U., Sieck, A., Spitzer, A., Strasser, M., Wege, S., and Weis, R., IEDM Techn. Digest (2005).
2. Amon, J., Kieslich, A., Schuster, T., Faul, J., Luetzen, J., Fan, C., Huang, C.-C., Fischer, B., Enders, G., Kudelka, S., Schroeder, U., Kuesters, K.-H., Lange, G., and Alsmeier, J., IEDM Techn. Digest (2004)
3. Schroeder, T., Lupina, G., Sohal, R., Lippert, G. and Wenger, Ch., Seifarth, O., Tallarida, M., and Schmeisser, D., J. Appl. Phys. 101, 014103 (2007)
4. Esaka, F., Furuya, K., Shimida, H., Imamura, M., Matsubayashi, N., Sato, H., and Kikuchi, T., J. Vac. Sci. Technol. A 15, 2521 (1997)
5. Prieto, P., and Kirby, R. E., J. Vac. Sci. Technol. A 13, 2819 (1995)
6. Kim, Y. C., Park, H. H., Chun, J. S., and Lee, W. J., Thin Solid Films, 237, 57 (1994)
7. Thermophysical properties of Matter, in TPRC Data Series, Vol. 13, edited by Touloukian, Y. S., Kirby, R. K., Taylor, R. E., and Lee, T. Y. R. (Plenum, New York, 1977)
8. Dupin, J.-C., Gonbeau, D., Viantier, P., and Levasseur, A., Phys. Chem. Chem. Phys. 2, 1319 (2000)

Related content

Powered by UNSILO

Interface Properties of PrxAl2-xO3 (x = 0 to 2) Dielectrics on TiN Studied by Synchrotron Radiation X-ray Photoelectron Spectroscopy

  • Grzegorz Lupina (a1), Thomas Schroeder (a1), Christian Wenger (a1), Jarek Dabrowski (a1), Gunther Lippert (a1) and Hans-Joachim Müssig (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.