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Interface Interstitial Recombination Rate and the Reverse Short Channel Effect

Published online by Cambridge University Press:  10 February 2011

M.E. Rubin
Affiliation:
Technology Development, VLSI Technology, Inc. 1109 McKay Dr., San Jose, CA 95131
S. Saha
Affiliation:
Technology Development, VLSI Technology, Inc. 1109 McKay Dr., San Jose, CA 95131
J. Lutze
Affiliation:
Technology Development, VLSI Technology, Inc. 1109 McKay Dr., San Jose, CA 95131
F. Nouri
Affiliation:
Technology Development, VLSI Technology, Inc. 1109 McKay Dr., San Jose, CA 95131
G. Scott
Affiliation:
Technology Development, VLSI Technology, Inc. 1109 McKay Dr., San Jose, CA 95131
D. Pramanik
Affiliation:
Technology Development, VLSI Technology, Inc. 1109 McKay Dr., San Jose, CA 95131
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Abstract

Experiment shows that the reverse short channel effect (RSCE) in nMOS devices is critically impacted by the inclusion of nitrogen in the gate oxide. A higher concentration of nitrogen results in a lessened RSCE, i.e. more threshold voltage rolloff for smaller gate lengths. We propose that the additional nitrogen reduces the interstitial recombination rate at the interface, resulting in a smaller interstitial flux and therefore less transient enhanced diffusion (TED) of boron to that interface. To test this hypothesis, we simulate boron redistribution in one and two dimensional MOS capacitor structures, as well as full nMOS devices. We then present simulations calibrated to a 0.2 pim technology currently in production.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

[1] Okayama, Y., Kasai, K., Yamaguchi, T., Ooishi, A., Takayanagi-Takagi, M., Matsuoka, F., and Kinugawa, M., VLSI Symposium, 220 (1998).Google Scholar
[2] Rafferty, C.S., Vuong, H.-H., Eshraghi, S.A., Giles, M.D., Pinto, M.R., and Hillenius, S.J., Tech. Dig. Int. Electron Devices Meet., 311 (1993).Google Scholar