Skip to main content Accessibility help

Interface Interstitial Recombination Rate and the Reverse Short Channel Effect

  • M.E. Rubin (a1), S. Saha (a1), J. Lutze (a1), F. Nouri (a1), G. Scott (a1) and D. Pramanik (a1)...


Experiment shows that the reverse short channel effect (RSCE) in nMOS devices is critically impacted by the inclusion of nitrogen in the gate oxide. A higher concentration of nitrogen results in a lessened RSCE, i.e. more threshold voltage rolloff for smaller gate lengths. We propose that the additional nitrogen reduces the interstitial recombination rate at the interface, resulting in a smaller interstitial flux and therefore less transient enhanced diffusion (TED) of boron to that interface. To test this hypothesis, we simulate boron redistribution in one and two dimensional MOS capacitor structures, as well as full nMOS devices. We then present simulations calibrated to a 0.2 pim technology currently in production.



Hide All
[1] Okayama, Y., Kasai, K., Yamaguchi, T., Ooishi, A., Takayanagi-Takagi, M., Matsuoka, F., and Kinugawa, M., VLSI Symposium, 220 (1998).
[2] Rafferty, C.S., Vuong, H.-H., Eshraghi, S.A., Giles, M.D., Pinto, M.R., and Hillenius, S.J., Tech. Dig. Int. Electron Devices Meet., 311 (1993).


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed