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The Interface for Cryogenic-Processed Metal/Inp

  • L. He (a1), W.A. Anderson (a1), J. Palmer (a1) and Z. Shi (a2)

Abstract

Au and Pd Schottky contacts to n-InP produce extremely high barrier heights and low leakage currents when deposition is on a substrate cooled to 77K. Extensive chemical and structural analyses indicate that this process causes the metal film to be continuous at 50Å, much better than in standard processing. Stoichiometry of InP near the surface is better maintained with this process. A thin P:O compound may exist at the interface which also contributes to a high barrier height.

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The Interface for Cryogenic-Processed Metal/Inp

  • L. He (a1), W.A. Anderson (a1), J. Palmer (a1) and Z. Shi (a2)

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