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Interface Effects on Photocarrier Transport in a-Si:H

Published online by Cambridge University Press:  21 February 2011

P. D. Persans
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
D. Arnzen
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
G. Possin
Affiliation:
General Electric Corporate Research and Development Laboratories, Schenectady, NY
L. D'Anna
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
X. S. Zhao
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
K. Breton
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
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Abstract

We discuss the absorption-length and film thickness dependence of photoconductivity in amorphous silicon using measurements of the ambipolar diffusion length and the Debye screening length.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

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